A semiconductor structure includes system-on-integrated chips, a first redistribution circuit structure and first conductive terminals. The system-on-integrated chips each include a die stack having two or more than two tiers, and each tier includes at least one semiconductor die. The first redistribution circuit structure is located on and electrically connected to the system-on-integrated chips. The first conductive terminals are connected on the first redistribution circuit structure, where the first redistribution circuit structure is located between the system-on-integrated chips and the first conductive terminals.

A microelectronic assembly is provided, comprising: an interposer having a first face and a second face opposite to the first face; a package substrate coupled to the first face; an integrated circuit die coupled to the second face; and an edge ring in the interposer. The interposer comprises a core comprising a first dielectric material and a redistribution layer (RDL), the RDL being on the first face or the second face, the RDL comprising a second dielectric material different from the first dielectric material, and the edge ring comprises: a metal trace in contact with the second dielectric material, the metal trace being along a periphery of the interposer, and a plurality of metal vias through the RDL, the plurality of metal vias in contact with the metal trace.

A method including followings is provided. An encapsulated device including a semiconductor die and an insulating encapsulation laterally encapsulating the semiconductor die is provided. An insulating layer is formed over a surface of the encapsulated device. A groove pattern is formed on the insulating layer. A conductive paste is filled in the groove pattern and the conductive paste filled in the groove pattern is cured.

A semiconductor package includes: a sub semiconductor package disposed over a substrate, the sub semiconductor package including a sub semiconductor chip which has chip pads on its upper surface, a molding layer which surrounds side surfaces of the sub semiconductor chip, and a redistribution layer formed over the sub semiconductor chip and the molding layer, the redistribution layer including redistribution conductive layers which are connected to the chip pads of the sub semiconductor chip and extend onto edges of the molding layer while having redistribution pads on their end portions; first sub package interconnectors connected to the redistribution pads to electrically connect the sub semiconductor chip and the substrate; a capacitor formed in the molding layer and including a first electrode, a second electrode, and a body portion, the first and second electrodes having upper surfaces which are connected to the redistribution conductive layers, respectively.

A semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, and a first encapsulant covering at least a portion of each of the inactive surface and a side surface of the semiconductor chip. A metal layer is disposed on the first encapsulant, and includes a first conductive layer and a second conductive layer, sequentially stacked. A connection structure is disposed on the active surface of the semiconductor chip, and includes a first redistribution layer electrically connected to the connection pad. A lower surface of the first conductive layer is in contact with the first encapsulant and has first surface roughness, and an upper surface of the first conductive layer is in contact with the second conductive layer and has second surface roughness smaller than the first surface roughness.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A power module (1) is disclosed, comprising: first and second substrates (10), each substrate patterned layer of electrically conductive material (12), a plurality of pre-packed power cells (20), positioned between the substrates, each cell comprising: an electrically insulating core (21) embedding at least one power die (22), and two external layers (23) of electrically conductive material on opposite sides of the electrically insulating core (21), said external layers being respectively connected to each patterned layers of the substrates,
wherein each external layer of a pre-packed power cell comprises a contact pad (230) connected to a respective contact (220) of the power die through connections arranged in the electrically insulating core (21), said contact pad having a surface area greater than the surface area of the power die electrical contact to which it is connected.

A semiconductor device package includes a first electronic device and a second electronic device. The first electronic device includes a first redistribution layer (RDL) including a circuit layer. The second electronic device is disposed on the first RDL of the first electronic device. The second electronic device includes an encapsulant and a patterned conductive layer. The encapsulant has a first surface facing the first RDL of the first electronic device, and a second surface opposite to the first surface. The patterned conductive layer is disposed at the second surface of the encapsulant, and is configured to be electrically coupled to the circuit layer of the first RDL of the first electronic device.

A chip package includes a semiconductor die laterally encapsulating by an insulating encapsulant, a first dielectric portion, conductive vias, conductive traces and a second dielectric portion. The first dielectric portion covers the semiconductor die and the encapsulant. The conductive vias penetrate through the first dielectric portion and electrically connected to the semiconductor die. The conductive traces are disposed on the first dielectric portion. The second dielectric portion is disposed on the first dielectric portion and covering the conductive traces, wherein a first minimum lateral width of a conductive trace among the conductive traces is smaller than a second minimum lateral width of a conductive via among the conductive vias. A method of forming the chip package is also provided.

A light-emitting assembly with higher connection tolerances in manufacture includes a substrate, a light-emitting diode on the substrate, a transparent electrode, and a wire connected to the transparent electrode. The substrate includes a driving circuit connected to the light-emitting diode. The light-emitting diode includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode, the first electrode receiving the first driving signal. transparent electrode is connected to the second electrode. An orthographic projection area of the transparent electrode on the substrate is larger than an orthographic projection area of the second electrode on the substrate allowing less criticality in the alignment of signal wires for receiving the second driving signal. The light-emitting diode is configured to emit source light according to the first driving signal and the second driving signal.