A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

An electronics package includes a support substrate, an electrical component having a first surface coupled to a first surface of the support substrate, and an insulating structure coupled to the first surface of the support substrate and sidewalls of the electrical component. The insulating structure has a sloped outer surface. A conductive layer encapsulates the electrical component and the sloped outer surface of the insulating structure. A first wiring layer is formed on a second surface of the support substrate. The first wiring layer is coupled to the conductive layer through at least one via in the support substrate.

A semiconductor package includes a redistribution layer, a semiconductor chip on the redistribution layer, and a molding layer covering a sidewall of the semiconductor chip and a top surface and a sidewall of the redistribution layer. The sidewall of the redistribution layer is inclined with respect to a bottom surface of the redistribution layer, and a sidewall of the molding layer is spaced apart from the sidewall of the redistribution layer.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

A semiconductor package includes a redistribution layer, a semiconductor chip on the redistribution layer, and a molding layer covering a sidewall of the semiconductor chip and a top surface and a sidewall of the redistribution layer. The sidewall of the redistribution layer is inclined with respect to a bottom surface of the redistribution layer, and a sidewall of the molding layer is spaced apart from the sidewall of the redistribution layer.

A multi-chip package includes two electronic components bonded to each other via electrical contacts on corresponding faces of the components that are directly opposite each other. The components are encapsulated in a volume of molding material that includes a upper and lower sets of redistribution layers disposed on upper and lower surfaces of the volume of molding material that include electrical interconnects. The package includes one or more through-package interconnects that pass through the molding material. A first through-package interconnect couples an electrically conductive interconnect in a first redistribution layer to an electrically conductive interconnect in a second redistribution layer on an opposite side of the volume of molding material from the first redistribution layer, or it couples the interconnect to one of the components within the volume of molding material.

A semiconductor package includes a chiplet, a first underfill surrounding the chiplet, and a first encapsulant laterally covering the first underfill. The chiplet includes a semiconductor substrate and die connectors disposed over the semiconductor substrate. The first underfill includes first fillers, and a portion of the first fillers has a substantially planar surface at a first surface of the first underfill. The first encapsulant includes a first surface and a second surface opposite to the first surface, the first surface is substantially leveled with surfaces of the die connectors, and the second surface is substantially leveled with the first surface of the first underfill.

A semiconductor package includes first bump structures that include a stud portion disposed below the second rear surface pads of the first group, and a bonding wire portion that extends from the stud portion and is connected to the first front surface pads of the first group; second bump structures disposed below the second rear surface pads of the second group; an encapsulant that encapsulates the second semiconductor chip and the first and second bump structures; and a redistribution structure disposed below the encapsulant, and that includes an insulating layer, redistribution layers disposed below the insulating layer, and redistribution vias that penetrate through the insulating layer and connect the redistribution layers to the first bump structures or the second bump structures. At least a portion of the redistribution vias connected to the first bump structures is in contact with the stud portion.