A manufacturing method of a semiconductor structure includes covering first and second semiconductor dies with an insulating encapsulant. The first semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a first conductive terminal distributed at the active surface. The second semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a second conductive terminal distributed at the active surface. A redistribution circuit layer is formed on the insulating encapsulant and the active surfaces of the first and second semiconductor dies. A conductive trace of the redistribution circuit layer is electrically connected from the first semiconductor die and meanderingly extends to the second semiconductor die, and a ratio of a total length of the conductive trace to a top width of the insulating encapsulant between the first and second semiconductor dies ranges from about 3 to about 10.

An integrated circuit is provided that comprises a first substrate having a plurality of conductive contact pads spaced apart from one another on a surface of the first substrate, a dielectric layer overlying the first substrate and the plurality of conductive contact pads, and a second substrate overlying the dielectric layer. A plurality of superconducting contacts extend through the second substrate and the dielectric layer to the first substrate, wherein each superconducting contact of the plurality of superconducting contacts is aligned with and in contact with a respective conductive contact pad of the plurality of conductive contact pads.

An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

The disclosure relates to systems, and methods for improving connectivity of embedded components. Specifically, the disclosure relates to systems and methods for using additive manufacturing to improve connectivity of embedded components with the host structure and/or other embedded components by selectably bridging the gap naturally formed due to manufacturing variation and built in tolerances, between the embedded components or devices and the host structure, and between one embedded component and a plurality of other embedded components.

The disclosure relates to systems, and methods for improving connectivity of embedded components. Specifically, the disclosure relates to systems and methods for using additive manufacturing to improve connectivity of embedded components with the host structure and/or other embedded components by selectably bridging the gap naturally formed due to manufacturing variation and built in tolerances, between the embedded components or devices and the host structure, and between one embedded component and a plurality of other embedded components.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.

A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.