Patent classifications
H01L2224/2405
Functional stiffener that enables land grid array interconnections and power decoupling
An exemplary assembly includes a top circuit substrate; a bottom circuit assembly that underlays the top circuit substrate and is attached to the top circuit substrate by an adhesive layer as a stiffener, the adhesive layer, and a plurality of conductive balls. The top circuit substrate includes a plurality of upper vias that extend through the top circuit substrate. The bottom circuit assembly includes a plurality of lower vias that extend through the bottom circuit assembly. The adhesive layer includes internal connections that electrically connect the upper vias to the lower vias. The conductive balls are housed in the lower vias. The bottom circuit assembly has an elastic modulus at least six times the elastic modulus of the top circuit substrate, and has a coefficient of thermal expansion at least two times the coefficient of thermal expansion of the top circuit substrate.
Functional stiffener that enables land grid array interconnections and power decoupling
An exemplary assembly includes a top circuit substrate; a bottom circuit assembly that underlays the top circuit substrate and is attached to the top circuit substrate by an adhesive layer as a stiffener, the adhesive layer, and a plurality of conductive balls. The top circuit substrate includes a plurality of upper vias that extend through the top circuit substrate. The bottom circuit assembly includes a plurality of lower vias that extend through the bottom circuit assembly. The adhesive layer includes internal connections that electrically connect the upper vias to the lower vias. The conductive balls are housed in the lower vias. The bottom circuit assembly has an elastic modulus at least six times the elastic modulus of the top circuit substrate, and has a coefficient of thermal expansion at least two times the coefficient of thermal expansion of the top circuit substrate.
FLEXIBLE DEVICE INCLUDING CONDUCTIVE TRACES WITH ENHANCED STRETCHABILITY
Flexible devices including conductive traces with enhanced stretchability, and methods of making and using the same are provided. The circuit die is disposed on a flexible substrate. Electrically conductive traces are formed in channels on the flexible substrate to electrically contact with contact pads of the circuit die. A first polymer liquid flows in the channels to cover a free surface of the traces. The circuit die can also be surrounded by a curing product of a second polymer liquid.
FLEXIBLE DEVICE INCLUDING CONDUCTIVE TRACES WITH ENHANCED STRETCHABILITY
Flexible devices including conductive traces with enhanced stretchability, and methods of making and using the same are provided. The circuit die is disposed on a flexible substrate. Electrically conductive traces are formed in channels on the flexible substrate to electrically contact with contact pads of the circuit die. A first polymer liquid flows in the channels to cover a free surface of the traces. The circuit die can also be surrounded by a curing product of a second polymer liquid.
Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect
A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.
Chip Structure, Wafer Structure And Method For Manufacturing The Same
A chip structure, a wafer structure and a method for manufacturing the same are provided in the present disclosure. A first chip and a second chip are bonded by bonding layers of a dielectric material. Top wiring layers are led out through bonding via holes from a back surface of a bonded chip. The bonding via holes are used for bonding and are surrounded by the bonding layers. A top wiring layer of a third chip is led out through bonding pads formed in a bonding layer. The bonding via holes are aligned with and bonded to the bonding pads to achieve bonding of the three chips. The top wiring layer of the third chip is led out from the back surface of the third chip through a lead-out pad.
LEADLESS PACKAGED DEVICE WITH METAL DIE ATTACH
A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.
MICROELECTRONIC ASSEMBLIES INCLUDING STACKED DIES COUPLED BY A THROUGH DIELECTRIC VIA
Disclosed herein are microelectronic assemblies, as well as related apparatuses and methods. In some embodiments, a microelectronic assembly may include a plurality of dies stacked vertically; a trench of dielectric material extending through the plurality of dies; a conductive via extending through the trench of dielectric material; and a plurality of conductive pathways between the plurality of dies and the conductive via, wherein individual ones of the conductive pathways are electrically coupled to the conductive via and to individual ones of the plurality of dies, and wherein the individual ones of the plurality of conductive pathways have a first portion including a first material and a second portion including a second material different from the first material.
LIGHT EMITTING DIODE DISPLAY WITH REDUNDANCY SCHEME
A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.
Semiconductor package with liquid metal conductors
A semiconductor package includes a lead frame, a semiconductor device, a liquid metal conductor, and an encapsulation material. The semiconductor device is affixed to the lead frame. The liquid metal conductor couples the semiconductor device to the lead frame. The encapsulation material encases the semiconductor device, the liquid metal conductor, and at least a portion of the lead frame.