A display device may include pixels, each of the pixels including first and second lower electrodes disposed on a substrate; first and second upper electrodes respectively disposed on the first and second lower electrodes; a first insulating layer including a first contact hole exposing a portion of the first lower electrode, and a second contact hole exposing a portion of the second lower electrode; a first pixel electrode disposed on the first insulating layer, and contacting the first lower electrode through the first contact hole; a second pixel electrode disposed on the first insulating layer, and contacting the second lower electrode through the second contact hole; and a light emitting element disposed between the first and second upper electrodes. The first and second pixel electrodes may be respectively and electrically connected with the first and second upper electrodes.

Semiconductor devices having recessed edges with plated structures, semiconductor assemblies formed therefrom, and associated systems and methods are disclosed herein. In one embodiment, a semiconductor assembly includes a first semiconductor device and a second semiconductor device. The first semiconductor device can include an upper surface and a first dielectric layer over the upper surface, the second semiconductor device can include a lower surface and a second dielectric layer over the lower surface, and the first and second dielectric layers can be bonded to couple the first and second semiconductor devices. The first and second dielectric layers can each include a plurality of inwardly extending recesses exposing a plurality of metal structures on the respective upper and lower surfaces, and the upper surface recesses and metal structures can correspond to the lower surface recesses and metal structures. The metal structures can be electrically coupled by plated structures positioned in the recesses.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

A display device includes first banks extending in a first direction and that are spaced apart from each other in a second direction intersecting the first direction, a first electrode extending in the first direction and including a first part disposed between the first banks, a second electrode extending in the first direction and including a second part spaced apart from the first part in the second direction and disposed between the first banks, a first dummy pattern disposed on one of the first banks and spaced apart from the first part, a second dummy pattern disposed on another one of the first banks and spaced apart from the second part, and light-emitting elements disposed between the first banks, the light-emitting elements having at least one end portion disposed on one of the first part of the first electrode and the second part of the second electrode.

A microelectronic assembly is disclosed, comprising: a substrate having a core made of glass; and a first integrated circuit (IC) die and a second IC die coupled to a first side of the substrate. The core comprises a cavity, a third IC die is located within the cavity, and the core further comprises one or more conductive through-glass via (TGV) that facilitates electrical coupling between the first side of the substrate and an opposing second side of the substrate. In some embodiments, the cavity is a blind cavity; in other embodiments, the cavity is a through-hole. In some embodiments, the third IC die merely provides lateral coupling between the first IC die and the second IC die; in other embodiments, the third IC die also provides electrical coupling between the first side and the second side of the substrate with through-silicon vias.

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.

An electronic package is provided and includes an electronic element connected to a plurality of inductor circuits embedded in an insulator of a package substrate by fan-out conductive copper pillars, and at least one shielding layer non-electrically connected to the inductor circuits, where the shielding layer includes a plurality of line segments not connected to each other, such that the shielding layer shields the inductor circuits, thereby achieving the electrical requirements of high-current products while improving the inductance value and quality factor.

A display device and a method of manufacturing the display device are disclosed. A display device includes a substrate, a plurality of first lines disposed on the substrate and spaced apart from each other, a plurality of second lines disposed on the substrate and disposed between the plurality of respective first lines, a plurality of light emitting elements disposed on the plurality of first lines and the plurality of second lines, and a plurality of third lines disposed on the plurality of light emitting elements. Each of the plurality of light emitting elements includes a first semiconductor layer overlapping the plurality of first lines and electrically connected to the plurality of first lines and the plurality of second lines, a light emitting layer, a second semiconductor layer, a conductor layer in contact with the plurality of third lines, and a non-conductor layer overlapping the plurality of second lines.

In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing reduced height semiconductor packages for mobile electronics. For instance, there is disclosed in accordance with one embodiment a stacked die package having therein a bottom functional silicon die; a recess formed within the bottom functional silicon die by a thinning etch partially reducing a vertical height of the bottom functional silicon die at the recess; and a top component positioned at least partially within the recess formed within the bottom functional silicon die. Other related embodiments are disclosed.