A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

A chip package and method for fabricating the same are provided that includes an off-die inductor. The off-die inductor is disposed in a redistribution layer formed on a bottom surface of an integrated circuit (IC) die. The redistribution layer is connected to a package substrate to form the chip package.

A manufacturing method of a semiconductor structure includes covering first and second semiconductor dies with an insulating encapsulant. The first semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a first conductive terminal distributed at the active surface. The second semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a second conductive terminal distributed at the active surface. A redistribution circuit layer is formed on the insulating encapsulant and the active surfaces of the first and second semiconductor dies. A conductive trace of the redistribution circuit layer is electrically connected from the first semiconductor die and meanderingly extends to the second semiconductor die, and a ratio of a total length of the conductive trace to a top width of the insulating encapsulant between the first and second semiconductor dies ranges from about 3 to about 10.

A display device includes a first electrode and a second electrode disposed on a substrate, the first and second electrodes being spaced apart from each other with a spaced area disposed between the first and second electrodes, an insulating layer disposed on the first electrode and the second electrode, the insulating layer filling the spaced area, and a light emitting element disposed on the insulating layer and having a first end disposed on the first electrode and a second end opposite to the first end. The insulating layer includes a first opening adjacent to the first end and exposing the insulating layer, and the spaced area is adjacent to the second end of the light emitting element.

A chip package and method for fabricating the same are provided that includes a near-die integrated passive device. The near-die integrated passive device is disposed between a package substrate and an integrated circuit die of a chip package. Some non-exhaustive examples of an integrated passive device that may be disposed between the package substrate and the integrated circuit die include a resistor, a capacitor, an inductor, a coil, a balum, or an impedance matching element, among others.

In one embodiment, an electronics assembly includes a cold plate assembly having a first surface, at least one power electronic device disposed within a recess on the first surface of the cold plate assembly, and a printed circuit board disposed on a surface of the at least one power electronic device. The printed circuit board includes a first insulation layer, a second insulation layer, an electrically conductive power layer between the first insulation layer and the second insulation layer, a first set of thermal vias extending from the electrically conductive power layer and toward the first surface of the cold plate assembly, and a second set of thermal vias extending from the first surface of the cold plate assembly toward the electrically conductive power layer. The first set of thermal vias is electrically isolated from the second set of thermal vias.

A method includes forming a build-up package substrate, which includes forming a first plurality of redistribution lines (RDLs) and a second plurality of RDLs, forming a first plurality of through-vias on the first plurality of RDLs, bonding an interconnect die to the second plurality of RDLs, encapsulating the interconnect die and the first plurality of through-vias in a first encapsulant, and forming a third plurality of RDLs over the first encapsulant. The third plurality of RDLs are electrically connected to the first plurality of through-vias. An organic package substrate is bonded to the build-up package substrate. The build-up package substrate and the organic package substrate in combination form a compound organic package substrate. A first package component and a second package component are bonded to the compound organic package substrate, and are electrically interconnected through the interconnect die.

A semiconductor structure including a plurality of semiconductor dies, an insulating encapsulant, and a redistribution structure disposed on the semiconductor dies and the insulating encapsulant is provided. The insulating encapsulant is interposed between adjacent two of the semiconductor dies, and the insulating encapsulant includes a first portion wider than a second portion connected to the first portion. The redistribution structure includes a dielectric layer overlying the insulating encapsulant, and a conductive trace overlying the dielectric layer and opposite to the insulating encapsulant. The conductive trace includes at least one turn and is connected to a conductive terminal of one of the adjacent two of the semiconductor dies, and the conductive trace extends across the dielectric layer to reach another conductive terminal of another one of the adjacent two of the semiconductor dies.

A fan-out packaging method employing a combined process includes: manufacturing at least two layers of basic circuit patterns on a substrate; manufacturing a galvanic isolation layer on one of the two layers of basic circuit patterns; manufacturing a fine circuit pattern on the galvanic isolation layer; using a bonding layer to bond an electronic component to the galvanic isolation layer, and using a patch material to establish an electrical connection between the electronic component and the fine circuit pattern; and using a packaging layer to package the electronic component, wherein the fine circuit pattern has a width less than widths of the basic circuit patterns. In the present disclosure, multiple layers of circuits are manufactured before installation and packaging of electronic components, thereby reducing the number of times an insulation material is to be heated, and broadening the range of available types of insulation materials.

A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.