The present disclosure provides a fan-out chip packaging structure and a method to fabricate the fan-out chip package. . The fan-out chip packaging structure includes a first redistribution layer, a second redistribution layer, metal connecting posts, a semiconductor chip, a first packaging layer, a stacked chip package, a passive element, a filling layer, a metal bumps, and a second packaging layer. By means of the present disclosure, various chips having different functions can be integrated into one package structure, thereby improving the integration level of the fan-out packaging structure. By means of the first redistribution layer, the second redistribution layer, and the metal connecting posts, a three-dimensional vertically stacked package is achieved. In this way, the integration level of the packaging structure can be effectively improved, and the conduction path can be effectively shortened, thereby reducing power consumption, increasing the transmission speed, and increasing the data processing capacity.

A manufacturing method of a semiconductor structure includes covering first and second semiconductor dies with an insulating encapsulant. The first semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a first conductive terminal distributed at the active surface. The second semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a second conductive terminal distributed at the active surface. A redistribution circuit layer is formed on the insulating encapsulant and the active surfaces of the first and second semiconductor dies. A conductive trace of the redistribution circuit layer is electrically connected from the first semiconductor die and meanderingly extends to the second semiconductor die, and a ratio of a total length of the conductive trace to a top width of the insulating encapsulant between the first and second semiconductor dies ranges from about 3 to about 10.

A method for manufacturing an electronic device includes providing a substrate with a first major surface having a microchannel, wherein the microchannel has a first end and a second end; dispensing a conductive liquid in the microchannel to cause the conductive liquid to move, primarily by capillary pressure, in a first direction toward the first end of the microchannel and in a second direction toward the second end of the microchannel; and solidifying the conductive liquid to form an electrically conductive trace electrically connecting a first electronic device at the first end of the microchannel to a second electronic device at the second end of the microchannel.

Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

A semiconductor device may include a bond pad/probe pad pair that includes a bond pad and a probe pad positioned to be adjacent to each other to form an L shape. The device may also include a through-silicon via (TSV) pad positioned to be at least partially or entirely inside the recess area of the L shape. The bond pad and the probe pad may each have an opening, and at least a portion of the opening of the bond pad may extend into a portion of the opening of the probe pad. The arrangement of the bond pad, the probe pad and the TSV may be implemented in a wafer-on-wafer (WOW) that includes multiple stacked wafers. A method of fabricating the TSV may include etching the stacked wafers to form a TSV opening that extends through the multiple wafers, and filling the TSV opening with conductive material.

A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.