H01L2224/4005

Electronic module

An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.

SEMICONDUCTOR PACKAGE AND METHOD OF MAKING THE SAME

A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second low side FET, a first high side FET, and a second high side FET to the lead frame; mounting a first metal clip and a second metal clip; forming a molding encapsulation; and applying a singulation process.

Power semiconductor module with laser-welded leadframe

A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

SEMICONDUCTOR PACKAGE AND METHOD FOR MARKING A SEMICONDUCTOR PACKAGE

In an embodiment, a semiconductor package is provided that includes a first package surface and a second package surface opposing the first surface, a plastic molding and one or more semiconductor dies. The first package surface includes a first surface of the plastic molding and a first metallic area exposed from the plastic molding. The first metallic area includes a first product marking including at least one alphanumeric character and the first surface of the plastic molding includes a second product marking including at least one alphanumeric character.

Electronic module, method of manufacturing connector, and method of manufacturing electronic module

An electronic module has a first electronic element 13, a first connector 60 provided in one side of the first electronic element 13, and having a first columnar part 62 extending to another side and a first groove part 64 provided in a one-side surface, and a second electronic element 23 provided in one side of the first connector 60 via a conductive adhesive agent provided inside a circumference of the first groove part 64. The first connector 60 has a first concave part 67 on one side at a position corresponding to the first columnar part 62.

Electronic module, method of manufacturing connector, and method of manufacturing electronic module

An electronic module has a first electronic element 13, a first connector 60 provided in one side of the first electronic element 13, and having a first columnar part 62 extending to another side and a first groove part 64 provided in a one-side surface, and a second electronic element 23 provided in one side of the first connector 60 via a conductive adhesive agent provided inside a circumference of the first groove part 64. The first connector 60 has a first concave part 67 on one side at a position corresponding to the first columnar part 62.

SEMICONDUCTOR DEVICE
20220084917 · 2022-03-17 ·

A semiconductor device includes: a first chip including first and second electrodes provided at a first surface, and a third electrode provided at a second surface positioned at a side opposite to the first surface; a second chip including fourth and fifth electrodes provided at a third surface, and a sixth electrode provided at a fourth surface positioned at a side opposite to the third surface, wherein the second chip is disposed to cause the third surface to face the first surface; a first connector disposed between the first electrode and the fourth electrode and connected to the first and fourth electrodes; and a second connector disposed between the second electrode and the fifth electrode and connected to the second and fifth electrodes.

LONG-LIFE EXTENDED TEMPERATURE RANGE EMBEDDED DIODE DESIGN FOR ELECTROSTATIC CHUCK WITH MULTIPLEXED HEATERS ARRAY
20220068691 · 2022-03-03 ·

A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer. The plurality of diodes are connected in series to the plurality of heating elements, respectively. Each of the plurality of diodes includes a die of a semiconductor material arranged in a respective one of the cavities. The semiconductor material has a first coefficient of thermal expansion. A first side of the die is arranged on the first layer along the plane. A first terminal of the die is connected to a first electrical contact on the first layer.

Semiconductor package including low side field-effect transistors and high side field-effect transistors and method of making the same

A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second low side FET, a first high side FET, and a second high side FET to the lead frame; mounting a first metal clip and a second metal clip; forming a molding encapsulation; and applying a singulation process.

ELECTRONIC MODULE

An electronic module has a first substrate 11, a first electronic element 13 provided on one side of the first substrate 11, a first connection body 60 provided on one side of the first electronic element 13, a second electronic element 23 provided on one side of the first connection body 60, a second substrate 21 provided on one side of the second electronic element 23, and an abutment body 250 that abuts on a face on one side of the second electronic element 23 and is capable of imparting a force toward one side with respect to the second substrate 21.