A carrier and the clip are used to produce a packaging having a lead frame by connection to the chip using sintering of the solidified sintering pastes in one work step. The carrier may be a lead frame and a clip for at least one semiconductor element has at least one functional surface for connecting to the semiconductor element and a plurality of connections. The material of the earlier or of the clip includes a metal and a layer made of a solidified sintering paste. The sintering paste may contain silver and/or a silver compound. The sintering paste is arranged on the functional surface. The carrier or clip and the layer made of sintering paste form an intermediate product that can be connected to the semiconductor element.

A semiconductor chip package may comprise a semiconductor chip disposed on a substrate. The semiconductor chip may have a first surface and a second surface. The first surface of the semiconductor chip may be connected to the substrate. The semiconductor chip package may comprise a leadframe that includes a first lead and a second lead. The first lead of the leadframe may be directly attached to the second surface of the semiconductor chip. The second lead of the leadframe may be directly attached to the substrate.

A semiconductor chip package may comprise a semiconductor chip disposed on a substrate. The semiconductor chip may have a first surface and a second surface. The first surface of the semiconductor chip may be connected to the substrate. The semiconductor chip package may comprise a leadframe that includes a first lead and a second lead. The first lead of the leadframe may be directly attached to the second surface of the semiconductor chip. The second lead of the leadframe may be directly attached to the substrate.

Provided is a semiconductor package and a method of manufacturing the same, and more particularly, to a semiconductor package and a method of manufacturing the same in which stress applied while molding is efficiently dispersed by a three-dimensional clip structure so that structural reliability may be improved.

A semiconductor die is arranged at a die mounting location of a substrate. The substrate includes an array of electrically conductive leads at the periphery of the substrate. Electrical coupling is provided between the semiconductor die and selected ones of the electrically conductive leads in the array of electrically conductive leads via electrically conductive ribbons. Each ribbon has a body portion with a first width as well as first and second end portions bonded to the semiconductor die and to the electrically conductive leads, respectively. At least one of the first and second end portions of the electrically conductive ribbon includes a tapered portion having a second width smaller than the first width of the body portion.

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

A semiconductor device according to an embodiment includes: a die pad including an upper surface; a semiconductor chip provided on the upper surface, the semiconductor chip including a rectangular shape, and the semiconductor chip including an element region, and a termination region surrounding the element region; a first electrode provided on the semiconductor chip; a second electrode provided on the semiconductor chip; a first connector provided above the termination region, the first connector including a portion covering each of the four sides of the rectangular shape when viewed from above, and the first connector being electrically connected to the first electrode; and a sealing resin sealing a periphery of the semiconductor chip and the first connector.

A semiconductor device includes a semiconductor chip having a first surface, a first electrode and a second electrode provided on the first surface, a wiring electrically connected to the first electrode at the first surface, a first metal layer on the first surface and directly contacting the second electrode, a thickness of the first metal layer in a direction orthogonal to the first surface being greater than a height of a topmost portion of the wiring in the first direction from the first surface, and a resin package contacting the semiconductor chip, the first metal layer, at least a portion of the wiring, and a first portion of the first surface and leaving a second portion of the first surface exposed.

A semiconductor device includes a semiconductor chip having a first surface, a first electrode and a second electrode provided on the first surface, a wiring electrically connected to the first electrode at the first surface, a first metal layer on the first surface and directly contacting the second electrode, a thickness of the first metal layer in a direction orthogonal to the first surface being greater than a height of a topmost portion of the wiring in the first direction from the first surface, and a resin package contacting the semiconductor chip, the first metal layer, at least a portion of the wiring, and a first portion of the first surface and leaving a second portion of the first surface exposed.

A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer. The plurality of diodes are connected in series to the plurality of heating elements, respectively. Each of the plurality of diodes includes a die of a semiconductor material arranged in a respective one of the cavities. The semiconductor material has a first coefficient of thermal expansion. A first side of the die is arranged on the first layer along the plane. A first terminal of the die is connected to a first electrical contact on the first layer.