A semiconductor device includes a conductor having a plate shape with a first thickness, an insulator sealing a portion of the conductor, a semiconductor element sealed in the insulator and electrically connected to the portion of the conductor, and a terminal bonded to the conductor outside of the insulator. A length, along the conductor, from a section where the conductor and the terminal are bonded toward the semiconductor element to the insulator, is greater than the first thickness.

A semiconductor module includes a first semiconductor chip including a first main electrode, a second semiconductor chip including a second main electrode, and a conductive pattern. The wiring member includes a connection portion, a first portion, a second portion, and a coupling portion. The coupling portion couples the connection portion, the first portion, and the second portion to one another. A connecting protrusion is formed on a connection surface of the connection portion. A first protrusion is formed on a first connection surface of the first portion. A second protrusion is formed on a second connection surface of the first portion. The conductive pattern and the connection surface are joined to each other by a joining material. The first main electrode and the first connection surface are joined to each other by a first joining material. The second main electrode and the second connection surface are joined to each other by a second joining material.

The present invention relates to a metal clip structure and a semiconductor package including the same, and more particularly, to a metal clip structure and a semiconductor package including the same which may be light-weighted, increase bond strength of a conductive wire, and minimize contamination occurring due to a solder material used to bond a semiconductor chip to a metal pad.

An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.

A contact device for electrically contacting at least two electrical functional components within a connection interface. The contact device includes at least one busbar which extends from a first to a second contact region. When the functional component is electrically contacted by different contact regions of the busbar, a current path can be formed within the busbar between the first and the second contact region. Each contact region has at least one contact connection lug for integral connection to an external contact surface. The electrical contacting of at least one contact connection lug with an external contact surface of one of the functional components is formed via an integral bond. The integral bond is interrupted by at least one through-opening in the contact connection lug such that at least two contact elements which exclusively have portions of the formed integral bond are formed on the contact connection lug.

A semiconductor package includes a substrate including an interconnection, a semiconductor chip disposed on the substrate and including chip pads and at least one hot spot, a lower heat transfer material layer on at least one side of the semiconductor chip and extending in a first direction, an upper heat transfer material layer on the semiconductor chip and vertically overlapping the at least one hot spot, a heat transfer conductor including a base portion on the lower heat transfer material and a connection portion extending in a second direction, a molded layer covering the semiconductor chip and the heat transfer conductor, and external connection bumps below the substrate. A first area of the base portion of the heat transfer conductor in contact with the lower heat transfer material is equal to or greater than a second area of the connection portion in contact with the upper heat transfer material.

A semiconductor device, including: a semiconductor chip having a first electrode and a second electrode respectively on a upper surface and a lower surface thereof; and a wiring member including a bonding portion having a bonding surface, which is bonded to the first electrode with a solder therebetween, and a rising portion extending from an outer periphery of the bonding portion, the bonding surface being located, in a plan view of the semiconductor device, within the upper surface of the semiconductor chip. The bonding surface has an outer edge area and a middle area. In a height direction of the semiconductor device, a first height from the outer edge area of the bonding surface to the upper surface of the semiconductor chip is greater than a second height from the middle area of the bonding surface to the upper surface of the semiconductor chip.