A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

A copper wire having a diameter of 10 to 80 m is provided. The copper wire bulk material is 99.99 wt.-% pure copper or a copper alloy consisting of 10 to 1000 wt.-ppm of silver and/or of 0.1 to 3 wt.-% of palladium with copper as the remainder to make up 100 wt.-%, and the copper wire has a 0.5 to <6 nm thin circumferential surface layer of copper oxide.

A noble metal-coated copper wire for ball bonding, with a wire diameter between 10 m or more, and 25 m or less, includes a core material having a copper alloy having a copper purity of 98 mass % or higher, and a noble metal-coating layer formed on the core material. The noble metal-coating layer includes a palladium cavitating layer containing palladium; at least one element selected from the group consisting of Group 13 to 16 elements or an oxygen element, finely dispersed in the palladium; and a diffusion layer formed of copper diffused into the palladium. The noble metal-coating layer may include a palladium cavitating layer containing palladium, at least one element selected from the group consisting of Group 13 to 16 elements or an oxygen element, finely dispersed therein, and a nickel intermediate layer disposed between the core material and the noble metal-coating layer.

The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices.

The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 m.

Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis a and a short axis b of 10 or more and with an area of 15 m.sup.2 or more (fiber texture), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis a and a short axis b of 10 or more and with an area of 15 m.sup.2 or more (fiber texture), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

To provide an Al bonding wire satisfying excellent temperature cycle reliability and a favorable 1st bondability. The Al bonding wire contains 3.0% by mass or more and 10.0% by mass or less of Si, and an average diameter of a Si phase in a cross section (L cross-section) in a center axis direction including a wire center axis of the Al alloy bonding wire is equal to or larger than 0.8 m and equal to or smaller than 5.5 m.