A power overlay (POL) structure includes a power device having at least one upper contact pad disposed on an upper surface of the power device, and a POL interconnect layer having a dielectric layer coupled to the upper surface of the power device and a metallization layer having metal interconnects extending through vias formed through the dielectric layer and electrically coupled to the at least one upper contact pad of the power device. The POL structure also includes at least one copper wirebond directly coupled to the metallization layer.

An electronic assembly includes a plurality of electronic die arranged into shingles, each shingle having a multiple offset stacked die coupled by cascading connections. Each shingle is arranged in a stack of shingles with alternate shingles having die stacked in opposite directions and offset in a zigzag manner to facilitate vertical electrical connections from a top of the electronic assembly to a bottom die of each shingle.

An electronic assembly includes a plurality of electronic die arranged into shingles, each shingle having a multiple offset stacked die coupled by cascading connections. Each shingle is arranged in a stack of shingles with alternate shingles having die stacked in opposite directions and offset in a zigzag manner to facilitate vertical electrical connections from a top of the electronic assembly to a bottom die of each shingle.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

An apparatus relates generally to a microelectronic package. In such an apparatus, a microelectronic die has a first surface, a second surface opposite the first surface, and a sidewall surface between the first and second surfaces. A plurality of wire bond wires with proximal ends thereof are coupled to either the first surface or the second surface of the microelectronic die with distal ends of the plurality of wire bond wires extending away from either the first surface or the second surface, respectively, of the microelectronic die. A portion of the plurality of wire bond wires extends outside a perimeter of the microelectronic die into a fan-out (FO) region. A molding material covers the first surface, the sidewall surface, and portions of the plurality of the wire bond wires from the first surface of the microelectronic die to an outer surface of the molding material.

A semiconductor device, includes: a semiconductor element having element main surface and element back surface spaced apart from each other in thickness direction and including a plurality of main surface electrodes arranged on the element main surface; a die pad having a die pad main surface where the semiconductor element is mounted; a plurality of leads including at least one first lead arranged on one side in first direction orthogonal to the thickness direction with respect to the die pad, and arranged around the die pad when viewed in the thickness direction; a plurality of connecting members including a first connecting member bonded to the at least one first lead, and configured to electrically connect the main surface electrodes and the leads; and a resin member configured to seal the semiconductor element, a part of the die pad, parts of the leads, and the connecting members.

A semiconductor device, includes: a semiconductor element having element main surface and element back surface spaced apart from each other in thickness direction and including a plurality of main surface electrodes arranged on the element main surface; a die pad having a die pad main surface where the semiconductor element is mounted; a plurality of leads including at least one first lead arranged on one side in first direction orthogonal to the thickness direction with respect to the die pad, and arranged around the die pad when viewed in the thickness direction; a plurality of connecting members including a first connecting member bonded to the at least one first lead, and configured to electrically connect the main surface electrodes and the leads; and a resin member configured to seal the semiconductor element, a part of the die pad, parts of the leads, and the connecting members.

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

A power overlay (POL) structure includes a power device having at least one upper contact pad disposed on an upper surface of the power device, and a POL interconnect layer having a dielectric layer coupled to the upper surface of the power device and a metallization layer having metal interconnects extending through vias formed through the dielectric layer and electrically coupled to the at least one upper contact pad of the power device. The POL structure also includes at least one copper wirebond directly coupled to the metallization layer.