A semiconductor device package includes an electronic device, a conductive frame and a first molding layer. The conductive frame is disposed over and electrically connected to the electronic device, and the conductive frame includes a plurality of leads. The first molding layer covers the electronic device and a portion of the conductive frame, and is disposed between at least two adjacent ones of the leads.

A diode-laser assembly having an electrically isolated diode-laser bar on a cooled base-element is disclosed. The diode-laser bar is electrically isolated from the base-element and electrically isolated from any coolant water, thereby eliminating the need for de-ionized water and mitigating corrosion due to galvanic action. Multiple such diode-laser assemblies are stackable, with small bar-to-bar pitch, enabling a high-current and high-brightness diode-laser stack.

It is intended to reduce the price of a semiconductor device and increase the reliability thereof. In an interposer, a plurality of wiring layers are disposed between uppermost-layer wiring and lowermost-layer wiring. For example, a third wiring layer is electrically coupled directly to a first wiring layer as the uppermost-layer wiring by a long via wire extending through insulating layers without intervention of a second wiring layer. For example, an upper-surface terminal made of the first wiring layer is electrically coupled directly to a via land made of the third wiring layer by the long via wire. Between the adjacent long via wires, three lead-out wires made of the second wiring layer can be placed. The number of the lead-out wires that can be placed between the adjacent long via wires is larger than the number of the lead-out wires that can be placed between the adjacent via lands.

A semiconductor package includes a carrier substrate having a top surface, a semiconductor die mounted on the top surface, a plurality of bonding wires connecting an active surface of the semiconductor die to the top surface of the carrier substrate, an insulating material encapsulating the plurality of bonding wires, a component mounted on the insulating material, and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the plurality of bonding wires, the component and the insulating material.

It is intended to reduce the price of a semiconductor device and increase the reliability thereof. In an interposer, a plurality of wiring layers are disposed between uppermost-layer wiring and lowermost-layer wiring. For example, a third wiring layer is electrically coupled directly to a first wiring layer as the uppermost-layer wiring by a long via wire extending through insulating layers without intervention of a second wiring layer. For example, an upper-surface terminal made of the first wiring layer is electrically coupled directly to a via land made of the third wiring layer by the long via wire. Between the adjacent long via wires, three lead-out wires made of the second wiring layer can be placed. The number of the lead-out wires that can be placed between the adjacent long via wires is larger than the number of the lead-out wires that can be placed between the adjacent via lands.

A semiconductor device package includes an electronic device, a conductive frame and a first molding layer. The conductive frame is disposed over and electrically connected to the electronic device, and the conductive frame includes a plurality of leads. The first molding layer covers the electronic device and a portion of the conductive frame, and is disposed between at least two adjacent ones of the leads.

A semiconductor a first device includes semiconductor chip and a second semiconductor chip to which different power-supply voltages are supplied, connection bonding wires connecting the first semiconductor chip and the second semiconductor chip to each other, and a sealing resin provided to fill a gap between a first lead frame on which the first semiconductor chip is mounted and a second lead frame on which the second semiconductor chip is mounted so as to cover the respective circumferences of the first semiconductor chip and the second semiconductor chip. The respective surfaces of the first lead frame and the second lead frame in the regions opposed to each other are covered with an insulating protection film including a material having higher electrical breakdown voltage than a material included in the sealing resin.

A diode-laser assembly having an electrically isolated diode-laser bar on a cooled base-element is disclosed. The diode-laser bar is electrically isolated from the base-element and electrically isolated from any coolant water, thereby eliminating the need for de-ionized water and mitigating corrosion due to galvanic action. Multiple such diode-laser assemblies are stackable, with small bar-to-bar pitch, enabling a high-current and high-brightness diode-laser stack.