Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

An apparatus including components to stack semiconductor device die.

An apparatus for transferring an electronic component including a first platform, a second platform, an actuator mechanism, and a flexible push generator is provided. The first platform is configured to carry a carrier substrate. The second platform is configured to carry a target substrate. The actuator mechanism is configured to actuate the first platform and the second platform to approach and move away from each other. The flexible push generator is disposed near the first platform or the second platform and generating a plurality of flexible pushes toward the first platform and the second platform in response to the first platform and the second platform actuated in a way that the first platform and the second platform approach each other.

An apparatus for a direct transfer of a semiconductor device die from a wafer tape to a substrate. A first frame holds the wafer tape and a second frame secures the substrate. The second frame holds the substrate such that a transfer surface is disposed facing the semiconductor device die on a first side of the wafer tape. Two or more needles are disposed adjacent a second side of the wafer tape opposite the first side. A length of the two or more needles extends in a direction toward the wafer tape. A needle actuator actuates the two or more needles into a die transfer position at which at least one needle of the two or more needles presses on the second side of the wafer tape to press a semiconductor device die of the one or more semiconductor device die into contact with the transfer surface of the substrate.

An apparatus that directly transfers a semiconductor device die from a first substrate to a second substrate. The semiconductor device die is disposed on the first side of the first substrate. The apparatus includes a first frame to hold the first substrate, and a second frame to hold the second substrate adjacent to the first side of the first substrate. A needle is disposed adjacent to the first frame and extends in a direction toward the second side of the first substrate. A needle actuator is connected to the needle to move the needle, during a direct transfer process, to a die transfer position at which the needle contacts the second side of the first substrate to press the semiconductor device die into contact with the second substrate such that the semiconductor device die is released from the first substrate and is attached to the second substrate.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

An apparatus includes a needle including a hole extending from a first end to a second end through the needle and an energy-emitting device arranged in the hole of the needle. The energy-emitting device being configured to emit a specific wavelength and intensity of energy directed at an electrically-actuatable element to bond a circuit trace and the electrically-actuatable element.

An example method includes placing a semiconductor die on a bonding surface of metal substrate. The die includes metal pillars extending from a surface of the die aligned with respective bonding locations on the bonding surface of the substrate. The pillars and the substrate can be formed of a common type of metal. The method also includes controlling a laser to emit laser light to heat the substrate at respective bonding locations to bond the metal pillars with the substrate at the respective bonding locations.