A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

A light emitting diode (LED) chip is bonded to a substrate. The LED chip includes a plurality of electrodes that each corresponds to a contact on the substrate. The plurality of electrodes are exposed to one or more laser beams for coupling the LED chip to the substrate. The laser beams may be directed to one or more edges or corners of the plurality of electrodes, where the edges or corners lie outside emission areas of LEDs on the LED chip.

A system for laser bonding of flip chip, and more particularly, to a system for laser bonding of flip chip for bonding a flip chip-type semiconductor chip to a substrate by using a laser beam is provided. According to the system for laser bonding of flip chip of the present disclosure, by performing laser bonding on a substrate while pressurizing semiconductor chips, even semiconductor chips which are bent or likely to bend may be bonded to the substrate without causing poor contact of solder bumps.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

A semiconductor manufacturing apparatus includes; a component separating apparatus configured to separate a defective component from a substrate, a bump conditioning apparatus including an end mill cutter and receiving the substrate following separation of the defective component from the substrate, the bump conditioning apparatus being configured to cut a first connection bump using the end mill cutter to provide a conditioned first connection bump, and the first connection bump being exposed by separating the defective component from the substrate, and a component attaching apparatus configured to receive the substrate following provision of the conditioned first connection bump, and mount a new component including a second connection bump to the substrate by coupling the second connection bump and the conditioned first connection bump.

A chip-transferring module, and a device and a method for transferring and bonding chips are provided. The chip-transferring module includes a mounting main body, a light-transmitting member, a first gas guiding structure and a second gas guiding structure. The mounting main body has a first accommodating space and a second accommodating space. The light-transmitting member is disposed in the first accommodating space. The first gas guiding structure is disposed in the mounting main body and has a plurality of suction openings exposed out of the mounting main body. The second gas guiding structure is disposed in the mounting main body and has at least one intake opening communicating with the second accommodating space.

An electrode welding method includes a laser irradiation apparatus preparation step of preparing a laser irradiation apparatus including a laser oscillator that emits a laser beam with a wavelength having absorbability with respect to a semiconductor chip and a spatial light modulator that adjusts the energy distribution of the laser beam emitted by the laser oscillator, an electrode positioning step of positioning, corresponding to electrodes of a wiring substrate, bump electrodes of a device, and an electrode welding step of irradiating the back surface of the semiconductor chip with the laser beam and welding the bump electrodes to the electrodes of the wiring substrate.

In one example, a system can comprise a laser assisted bonding (LAB) tool comprising a stage block and a laser source facing the stage block. The stage block can be configured to support a first substrate and a first electronic component coupled with the first substrate, the first electronic component comprising a first interconnect. The laser source can be configured to emit a first laser towards the stage block to induce a first heat on the first interconnect to bond the first interconnect with the first substrate. Other examples and related methods are also disclosed herein.

In one example, a method to manufacture a semiconductor device comprises providing an electronic component over a substrate, wherein an interconnect of the electronic component contacts a conductive structure of the substrate, providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block with a window, and heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure. Other examples and related methods are also disclosed herein.