A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

A laser bonding system which improves bonding between a semiconductor chip and a substrate is provided. A laser bonding system comprises a laser bonding apparatus; and a controller configured to control the laser bonding apparatus, wherein the laser bonding apparatus includes a stage which supports a substrate including a pad, and a semiconductor chip including a connection terminal; a pressurizer which moves up and down above the stage; a temperature measuring sensor configured to measure a temperature of the semiconductor chip and generate a temperature value; and a laser radiation apparatus configured to bond a pad of the substrate and a connection terminal of the semiconductor chip, using a laser beam passing through the pressurizer, and the controller lifts the pressurizer in response to the temperature value.

According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.

Provided is a flip-chip laser bonding system for bonding a semiconductor chip in the form of a flip chip to a substrate using a laser beam. In the flip-chip laser bonding system, the semiconductor chip is laser-bonded to the substrate while pressure is applied to the semiconductor chip. Accordingly, even a semiconductor chip that is bent or is capable of being bent can be bonded to a semiconductor chip without contact failure.

Provided is a flip-chip bonding apparatus using VCSEL device, and more particularly, to a flip-chip bonding apparatus using VCSEL device for bonding a flip-chip type semiconductor chip to a substrate using infrared laser light generated from the VCSEL device. The flip-chip bonding apparatus using VCSEL device may quickly control laser light to bond a semiconductor chip to a substrate, with high productivity and high quality.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:
Q≤|∫.sub.T1.sup.T2A(T)dT−∫.sub.T1.sup.T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

This patent application relates to methods and apparatus for temperature modification within a stack of microelectronic devices for mutual collective bonding of the microelectronic devices, and to related substrates and assemblies.

A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

A laser bonding method includes forming a bonding part including an adhesive layer and a conductive particle disposed within the adhesive layer on a substrate; aligning a bonding target by disposing the bonding target on a surface of the bonding part opposite the substrate; disposing a pressing part on a surface of the bonding target that is opposite to the bonding part and pressing the bonding target onto the bonding part through the pressing part; heating the bonding target by irradiating at least the pressing part with a laser and conducting heat from the pressing part to the bonding target and from the bonding target to the bonding part; and bonding together the bonding part and the bonding target by the heat conducted from the bonding target to the bonding part so that the conductive particle electrically connects the substrate and the bonding target. The pressing part may be removed.