A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25 C. and 60 C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions that are movable relative to one another in a longitudinal direction. In some embodiments, the individual regions include a first region having a first outer surface, and a second region peripheral to the first region and including a second outer surface. The first region is movable in a longitudinal direction to a first position, and the second region is movable in the longitudinal direction to a second position, such that in the second position, the second outer surface of the second region extends longitudinally beyond the first outer surface of the first region. The bond chuck can be positioned proximate a substrate of a semiconductor device such that movement of the first region and/or second region affect a shape of the substrate, which thereby causes an adhesive on the substrate to flow in a lateral, predetermined direction.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25 C. and 60 C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.