A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335 C. and less than 1414 C.

A heating and cooling device including: an airtight processing chamber openable to load a member-to-be-processed in the airtight processing chamber; a transfer apparatus to adjust a distance between the member-to-be-processed and a cooling unit that cools the member-to-be-processed, by moving the member-to-be-processed and/or the cooling unit; an induction heating apparatus to heat the member-to-be-processed, including a induction heating coil; a cooling apparatus to cool the member-to-be-processed by cooling the cooling unit; a temperature sensor to determine a temperature of the member-to-be-processed; and a controller to control the induction heating apparatus and the cooling apparatus based on the temperature determined by the temperature sensor.

A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a heating element. The two joining partners and the connecting means are arranged in the pressure chamber such that the connecting means is situated between the first joining partner and the second joining partner. A gas-tight region is then produced, in which the connecting means is arranged. Afterward, a gas pressure of at least 20 bar is produced in the pressure chamber outside the gas-tight region. The gas pressure acts on the gas-tight region and presses the first joining partner, the second joining partner and the connecting means together. The joining partners and the connecting means are then heated by means of the heating element to a predefined maximum temperature of at least 210 C. and then cooled.

A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335 C. and less than 1414 C.

A semiconductor reflow apparatus includes a conveyor comprising a laterally moveable surface configured to move in a first direction, a pickup tool including a head disposed above the conveyor, and an induction heating coil configured to generate a magnetic field in a direction passing through a surface of the conveyor, wherein the pickup tool is further configured to move the head in a vertical direction toward the conveyor.

An arrangement comprises a process chamber, an inductor chamber with one or more inductors arranged therein, a supply tube configured to carry process gas from a gas source to the process chamber, an outlet tube configured to carry process gas away from the process chamber, a first bypass tube arranged between the supply tube and the inductor chamber and configured to carry process gas from the supply tube to the inductor chamber, and a second bypass tube arranged between the inductor chamber and the outlet tube and configured to carry process gas from the inductor chamber to the outlet tube. A wall separates the inductor chamber from the process chamber.