H01L2224/75301

Apparatus for bonding substrates having a substrate holder with holding fingers and method of bonding substrates

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

SYSTEM AND RELATED TECHNIQUES FOR HANDLING ALIGNED SUBSTRATE PAIRS
20170372925 · 2017-12-28 ·

An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.

SYSTEM AND RELATED TECHNIQUES FOR HANDLING ALIGNED SUBSTRATE PAIRS
20170372925 · 2017-12-28 ·

An industrial-scale system and method for handling precisely aligned and centered semiconductor substrate (e.g., wafer) pairs for substrate-to-substrate (e.g., wafer-to-wafer) aligning and bonding applications is provided. Some embodiments include an aligned substrate transport device having a frame member and a spacer assembly. The centered semiconductor substrate pairs may be positioned within a processing system using the aligned substrate transport device, optionally under robotic control. The centered semiconductor substrate pairs may be bonded together without the presence of the aligned substrate transport device in the bonding device. The bonding device may include a second spacer assembly which operates in concert with that of the aligned substrate transport device to perform a spacer hand-off between the substrates. A pin apparatus may be used to stake the substrates during the hand-off.

Bond heads for thermocompression bonders, thermocompression bonders, and methods of operating the same

A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

REFLOW METHOD AND SYSTEM

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

APPARATUS FOR BONDING A SEMICONDUCTOR CHIP AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
20170352642 · 2017-12-07 ·

An apparatus for bonding a semiconductor chip to a package substrate, the apparatus comprising: a die-bonding unit configured to attach the semiconductor chip to the package substrate; a load-measuring unit installed at the die-bonding unit, the load-measuring unit including a panel having a plurality of regions and a plurality of load-measuring members with at least one load-measuring member arranged in each of the regions of the panel to measure load values applied to each of the regions; and a controller configured to determine a load and a flatness of the semiconductor chip based on the load values measured by the load-measuring members.

Arrangement and method for joining at least two joining partners

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK BY SURFACE ACTIVATION
20230178512 · 2023-06-08 ·

A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD
20170338136 · 2017-11-23 ·

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD
20170338136 · 2017-11-23 ·

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.