A driver mounting apparatus 40 includes a driver mount-side heat supply support member 42, a substrate support member 41, a driver-side heat supply support member 43, a first moving portion 44, and a second moving portion 45. The driver mount-side heat supply support member 42 supports a driver mount portion GSd and supplies heat to the driver mount portion GSd. The substrate support member supports a substrate main portion GSm. The driver-side heat supply support member 43 supports and sandwich a driver 21 with the driver mount-side heat supply support member 42 and supplies heat to the driver 21. The first moving portion 44 relatively moves the driver mount portion GSd and the driver mount-side heat supply support member 42 in an overlapping direction in which the glass substrate GS and the driver 21 are overlapped. The second moving portion 45 relatively moves the driver 21 and the driver-side heat supply support member 43 in the overlapping direction.

Methods and systems of bonding substrates include disposing a low melting point material and one or more high melting point materials having a higher melting temperature than a melting temperature of the low melting point material between a first substrate and a second substrate to form a substrate assembly including a contacting surface comprising first and second areas; applying a first force at the first area; and applying heat to form a bond layer between the first and second substrates. A first formed porosity of the bond layer is aligned with the first area of the contacting surface. A second formed porosity of the bond layer is aligned with the second area of the contacting surface to which the first force was not applied, and the first formed porosity is different from the second formed porosity.

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

A radiative heat collective bonder or gangbonder for packaging a semiconductor die stack is provided. The bonder generally includes a shroud positioned at least partially around the die stack and a radiative heat source positioned inward of the shroud and configured to emit a radiative heat flux in a direction away from the shroud. The bonder may further include a bondhead configured to contact the backside of the topmost die in the die stack and optionally include another bondhead configured to contact a substrate beneath the die stack. The radiative heat source may be configured to direct the radiative heat flux to at least a portion of the die stack to reduce a vertical temperature gradient in the die stack. One or both of the bondheads may be configured to concurrently direct a conductive heat flux into the die stack.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

A bonder includes a first chuck unit 1A, a second chuck unit 1B, a first base 21A, a second base 21B, and a first floating mechanism 3A. The first chuck unit 1A and the second chuck unit 1B are chuck units in a pair including respective suction surfaces for suction of bonding targets and are arranged while respective suction surfaces 11a and 11b face each other. The first base 21A and the second base 21B support the first chuck unit 1A and the second chuck unit 1B respectively. The first floating mechanism 3A applies gas pressure to a back surface 12a of the first chuck unit 1A to float the first chuck unit 1A from the first base 21A, thereby moving the suction surface 11a of the first chuck unit 1A toward the suction surface 11b of the second chuck unit 1B.