A vibration heat-pressing device includes a positioning member, a support body, a pressing mechanism, a vibration generator, and a heating rod. The positioning member supports and positions the workpiece. The pressing mechanism, the vibration generator, and the heating rod are located on the support body. The support body defines a first mounting hole. The heating rod is engaged in the first mounting hole. One end of the heating rod extends out from the support body and is connected to a heating device. The heating rod heats the heating rod of the pressing mechanism. A heat-conducting medium is filled in a gap between the heating rod and an inner wall of the first mounting hole. While the heating rod of the pressing mechanism are heated, the vibration generator vibrates the pressing mechanism.

An encapsulation resin composition is used to hermetically seal a gap between a base member and a semiconductor chip bonded onto the base member. The encapsulation resin composition has a reaction start temperature of 160 C. or less. A melt viscosity of the encapsulation resin composition is 200 Pa.Math.s or less at the reaction start temperature, 400 Pa.Math.s or less at any temperature which is equal to or higher than a temperature lower by 40 C. than the reaction start temperature and which is equal to or lower than the reaction start temperature, and 1,000 Pa.Math.s or less at a temperature lower by 50 C. than the reaction start temperature.

The purpose is, in mounting a semiconductor device onto a substrate, to make it easy to identify the remaining amount of an auxiliary joining agent, to stabilize the dispensing amount of the auxiliary joining agent, and to prevent a shortage of the auxiliary joining agent. Also for the purpose of efficient maintenance of a mounting machine, provided is an auxiliary joining agent adapted to aid joining of metals and prepared by dissolving a colorant in a solvent having a reducing property of removing an oxide film on a metal surface. The auxiliary joining agent is produced by a method including a step of mixing a solvent having a reducing property of removing an oxide film on a metal surface, and a colorant having a property of dissolving in the solvent.

A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure for supporting a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; an alignment structure including first alignment markings; an alignment element configured to be placed on the alignment structure using the bonding tool, the alignment element including second alignment markings; an imaging system configured to image relative positions of the first alignment markings and corresponding ones of the second alignment markings; and a computer system configured to provide an adjustment to a position of at least one of the bonding tool and the support structure during bonding of ones of the plurality of semiconductor elements to the substrate, the computer being configured to provide the adjustment at least partially based on the relative positions of the first alignment markings and the corresponding ones of the second alignment markings, the adjustment being specific to bonding of the ones of the plurality of semiconductor elements to a corresponding region of the substrate.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure for supporting a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; an alignment structure including first alignment markings; an alignment element configured to be placed on the alignment structure using the bonding tool, the alignment element including second alignment markings; an imaging system configured to image relative positions of the first alignment markings and corresponding ones of the second alignment markings; and a computer system configured to provide an adjustment to a position of at least one of the bonding tool and the support structure during bonding of ones of the plurality of semiconductor elements to the substrate, the computer being configured to provide the adjustment at least partially based on the relative positions of the first alignment markings and the corresponding ones of the second alignment markings, the adjustment being specific to bonding of the ones of the plurality of semiconductor elements to a corresponding region of the substrate.

Provided is a bonding apparatus. The bonding apparatus includes a stage configured to accommodate a substrate, a laser light source configured to provide laser light to devices on the substrate, and a bonding plate provided between the laser light source and the stage and configured to provide the devices on the substrate. The bonding plate includes a transparent substrate; a transparent layer below the transparent substrate; an device adhesion layer below the transparent layer and a reflective pattern provided above or below the transparent substrate and the transparent layer.

A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

A method for producing a layer including a connecting medium on an assembly partner is provided. The method includes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.