Sintering device (10) for sintering at least one electronic assembly (BG), having a lower die (20) and an upper die (30) which is slidable towards the lower die (20), or a lower die (20) which is slidable towards the upper die (30), wherein the lower die (20) forms a support for the assembly (BG) to be sintered and the upper die (30) comprises a receptacle which receives a pressure pad (32) for exerting pressure directed towards the lower die (20) and which comprises a delimitation wall (34) which laterally surrounds the pressure pad (32), and wherein the delimitation wall (34) has an outer delimitation wall (34a) and an inner delimitation wall (34b) which is surrounded in an adjacent manner by the outer delimitation wall (34a), and wherein the inner delimitation wall (34b) is mounted so as to be slidable towards the outer delimitation wall (34a) and, when pressure in the direction of the upper die (30) is exerted on the pressure pad (32), is mounted so as to be slid in the direction of the lower die (20), whereby, following the placing of the inner delimitation wall (34b) on the lower die (20), the pressure pad (32) is displaceable in the direction of the lower die (20).

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

A uniform pressure gang bonding device and fabrication method are presented using an expandable upper chamber with an elastic surface. Typically, the elastic surface is an elastomer material having a Young's modulus in a range of 40 to 1000 kilo-Pascal (kPA). After depositing a plurality of components overlying a substrate top surface, the substrate is positioned over the lower plate, with the top surface underlying and adjacent (in close proximity) to the elastic surface. The method creates a positive upper chamber medium pressure differential in the expandable upper chamber, causing the elastic surface to deform. For example, the positive upper chamber medium pressure differential may be in the range of 0.05 atmospheres (atm) and 10 atm. Typically, the elastic surface deforms between 0.5 millimeters (mm) and 20 mm, in response to the positive upper chamber medium pressure differential.

A semiconductor manufacturing apparatus according to an embodiment includes a chuck configured to receive a carrier thereon, a carrier contact device configured to contact the carrier on the chuck, and a bonding head configured to transfer a semiconductor die to the carrier and configured to attach the semiconductor die on the carrier. The chuck includes a chuck reference key positioned at an edge portion thereof. The carrier contact device includes a contact position recognition key. The semiconductor manufacturing apparatus also includes a camera configured to obtaining images of the chuck reference key and the contact position recognition key.

The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.

Interconnecting a first chip and a second chip by a bridge member includes a chip handler for handling the first chip and the second chip. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The chip handler has an opening and at least one support surface for supporting the first surfaces of the first chip and the second chip when the first chip and the second chip are mounted to the chip handler. A chip support member supports the first chip and the second chip from the second surfaces, and a bridge handler is provided for inserting the bridge member through the opening of the chip handler and for placing the bridge member onto the first sets of terminals of the first chip and the second chip.

A method for bonding a first substrate to a second substrate on mutually facing contact surfaces of the substrates, wherein the first substrate is mounted on a first chuck and the second substrate is mounted on a second chuck, and wherein a plate is arranged between the second substrate and the second chuck, wherein the second substrate with the plate is deformed with respect to the second chuck before and/or during the bonding. Furthermore, the present invention relates to a corresponding device and a corresponding plate.

A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

Interconnecting a first chip and a second chip includes mounting the first and second chips to a chip handler having an opening and at least one support surface. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The first surface of the first chip and the first surface of the second chip mounted to the chip handler are supported by the at least one support surface of the chip handler. The first and second chips are placed on a chip support member with the chip handler from the second surfaces. A bridge member is inserted by a bridge handler through the opening of the chip handler to place the bridge member onto the first sets of terminals of the first and second chips that are exposed from the opening.

A bonding apparatus includes a bonding stage on which either a rectangular substrate or a circular substrate can be installed; a first transport mechanism which transports the rectangular substrate from a first carry-in unit to the bonding stage and from the bonding stage to a first carry-out unit; and a second transport mechanism which transports the circular substrate from a second carry-in/out unit to the bonding stage and from the bonding stage to the second carry-in/out unit, in which a first transport path determined by the first transport mechanism and a second transport path determined by the second transport mechanism partially overlap.