Embodiments in accordance with the present inventive concept disclose a chip bonding apparatus that includes a stage configured to support a substrate and a heater that is disposed above the stage. The heater includes a heat generating portion and a body portion. The chip bonding apparatus further includes a bonding tool assembly fixing unit having a first portion connected to the body portion of the heater, and a second portion configured to receive the heat generating portion. The chip bonding apparatus further includes a first bonding tool connected to the heat generating portion; and a first bonding tool fixing unit having a third portion that is connected to the first portion, and a fourth portion configured to receive the first bonding tool. The bonding tool fixing unit may be attached by an electrostatic force or by coupling between a notch gripper and a corresponding notch.

A semiconductor device according to the present invention incudes a semiconductor chip, a conductive member for supporting the semiconductor chip, a joint material provided between the conductive member and the semiconductor chip, and a release groove formed on the surface of the conductive member and arranged away from the semiconductor chip with the one end and the other end of the release groove connected to the peripheral edges of the conductive member, respectively.

Place a first semiconductor chip onto an alignment carrier with protrusions of the semiconductor chip inserted into corresponding cavities of the alignment carrier, so that the protrusions and cavities locate the semiconductor chip with interconnect contacts overlying a window that is formed through the alignment carrier. Place a second semiconductor chip onto the alignment carrier with protrusions of the second semiconductor chip inserted into cavities of the alignment carrier, so that the protrusions and cavities locate the second semiconductor chip with interconnect contacts of the second semiconductor chip adjacent to the interconnect contacts of the first semiconductor chip and overlying the window. Fasten the semiconductor chips to the alignment carrier. Touch contacts of a interconnect bridge against the interconnect contacts of the first and second semiconductor chips by putting the interconnect bridge through the window.

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

A joint device includes a regulation device, a heating device, and a transparent portion. The regulation device includes a support base that includes a placement surface, and a regulation member. The heating device applies heat for causing solid phase diffusion at a joint interface between the two metal members by radiating an electromagnetic beam to a beam irradiated region via the regulation member. The beam irradiated region is set on a surface of one of the two metal members that is farther from the placement surface while the regulation device regulates motion of the two metal members. The transparent portion is provided at least at a portion corresponding to the beam irradiated region of the metal member to which the electromagnetic beam is irradiated, to transmit the electromagnetic beam.

A method for bonding a first substrate to a second substrate on mutually facing contact surfaces of the substrates, wherein the first substrate is mounted on a first chuck and the second substrate is mounted on a second chuck, and wherein a plate is arranged between the second substrate and the second chuck, wherein the second substrate with the plate is deformed with respect to the second chuck before and/or during the bonding. Furthermore, the present invention relates to a corresponding device and a corresponding plate.

A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.

A transfer head, a transfer head array, and a method for transferring an inorganic light-emitting diode are provided. The transfer head for transferring an inorganic light-emitting diode includes a first groove and a second groove. The first groove and the second groove are arranged sequentially in a first direction, and are connected to each other. The first groove is configured to provide an inlet and an outlet for the inorganic light-emitting diode to enter and exit the transfer head. After the inorganic light-emitting diode enters the second groove through the first groove, at least a partial structure of the inorganic light-emitting diode is confined in the second groove. Picking up and transferring the inorganic light-emitting diode is realized by the transfer head with a simple structure.

A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.