The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

Techniques and mechanisms for bonding a first wafer to a second wafer in the presence of a fluid, the viscosity of which is greater than a viscosity of air at standard ambient temperature and pressure. In an embodiment, a first surface of the first wafer is brought into close proximity to a second surface of the second wafer. The fluid is provided between the first surface and the second surface when a first region of the first surface is made to contact a second region of the second surface to form a bond. The viscosity of the fluid mitigates a rate of propagation of the bond along a wafer surface, which in turn mitigates wafer deformation and/or stress between wafers. In another embodiment, the viscosity of the fluid is changed dynamically while the bond propagates between the first surface and the second surface.

Techniques and mechanisms for bonding a first wafer to a second wafer in the presence of a fluid, the viscosity of which is greater than a viscosity of air at standard ambient temperature and pressure. In an embodiment, a first surface of the first wafer is brought into close proximity to a second surface of the second wafer. The fluid is provided between the first surface and the second surface when a first region of the first surface is made to contact a second region of the second surface to form a bond. The viscosity of the fluid mitigates a rate of propagation of the bond along a wafer surface, which in turn mitigates wafer deformation and/or stress between wafers. In another embodiment, the viscosity of the fluid is changed dynamically while the bond propagates between the first surface and the second surface.

The present disclosure provides a chip transfer substrate, a chip transfer device and a chip transfer method. The chip transfer substrate includes a substrate, a plurality of bases spaced apart from each other on the substrate, the plurality of bases being configured to carry micro light emitting diodes (Micro LEDs) to be transferred and being movable on the substrate; and a plurality of distance adjusting components each arranged between two adjacent bases and configured to adjust a distance between the two adjacent bases.

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.

A bonding head for performing a thermal compression process including a base body. A bonding heater is disposed on the base body that generates a melting heat. A bonding tool is disposed on the bonding heater that compresses a bonding object against a bonding base while transferring the melting heat to the bonding object to thereby bond the bonding object to the bonding base by the thermal compression process. A heat controller is disposed at the bonding tool, and a thermal conductivity of the heat controller is less than a thermal conductivity of the bonding tool.

A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.