A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.

The present invention relates to a system for transferring a micro LED, the system not only releasing a grip force of a transfer head when transferring a micro LED to a substrate but also applying an additional force to the micro LED from below the substrate to attract the micro LED onto the substrate.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

A substrate bonding apparatus that brings a part of a surface of a first substrate and a part of a surface of a second substrate into contact in a state where a temperature difference is generated therebetween, to form contact regions at the parts, and then enlarges the contact regions to bond the first substrate and the second substrate, wherein enlargement of the contact regions starts before positional misalignment between the first substrate and the second substrate exceeds a threshold, and the threshold is set such that positional misalignment after the first substrate and the second substrate are bonded does not exceed a tolerated value.

Provided are a wafer bonding apparatus for accurately detecting a bonding state of wafers in a wafer bonding process and/or in a wafer bonding system including the wafer bonding apparatus. The wafer bonding apparatus includes a first supporting plate including a first surface and vacuum grooves for vacuum-absorption of a first wafer disposed on the first surface, a second supporting plate including a second surface facing the first surface. A second wafer is on the second surface. The wafer bonding apparatus and/or the wafer bonding system include a bonding initiator at a center portion of the first supporting plate, and an area sensor on the first supporting plate and configured to detect a propagation state of bonding between the first wafer and the second wafer.

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.