A component mounting system for mounting a component on a substrate, the mounting system comprising a component supplying unit configured to supply the component; a substrate holding unit configured to hold the substrate in an orientation such that a mounting face for mounting the component on the substrate is facing vertically downward; a head configured to hold the component from vertically below; and a head drive unit that, by causing vertically upward movement of the head holding the component, causes the head to approach the substrate holding unit to mount the component on the mounting face of the substrate.

Die stacks and methods of making die stacks with very thin dies are disclosed. The die surfaces remain flat within a 5 micron tolerance despite the thinness of the die and the process steps of making the die stack. A residual flux height is kept below 50% of the spacing distance between adjacent surfaces or structures, e.g. in the inter-die spacing.

A bonding apparatus provided with a gas supplying unit for causing an inert gas to be sprayed from a spray aperture provided adjacent to a holding section of the bonding head. The spray aperture is provided so as to surround the holding section of the bonding head, in which a portion of the slits is a wide slit set to a higher jet flow rate of the inert gas than narrow slits of another portion, and the inert gas sprayed from the wide slit and the narrow slits forms an air curtain that surrounds the bonding portion between the semiconductor chip and the substrate. The inert gas sprayed from the wide slit forms a flow that passes between the semiconductor chip and the substrate.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A component joining apparatus, which can realize positioning between a component and a substrate with high accuracy by avoiding influence of thermal expansion of the substrate at the time of joining the component to the substrate by heating at a high temperature, includes a component supply head holding a component and a heating stage heating and holding a substrate, in which a heating region where the heating stage contacts the substrate includes a joining region of the substrate in which the component is joined, and the substrate is larger than the heating stage and a peripheral part of the substrate does not contact the heating stage.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A chip on film package is provided. The chip on film package includes a film substrate with a base film, a conductive pad extending in a first direction on the base film, and a conductive line pattern extending from the conductive pad; a semiconductor chip provided on the film substrate; and a bump structure provided between the semiconductor chip and the conductive pad. A first peripheral wall and a second peripheral wall of the bump structure extend in the first direction and define a trench, a portion of the conductive pad is provided in the trench, and the conductive pad is spaced apart from at least one of the first peripheral wall and the second peripheral wall.

A conveying unit for conveying a device chip onto a predetermined electrode of a board has a chip chuck that holds under suction one surface of the device chip, a support base to which the chip chuck is fixed in an inclinable manner, and a moving unit that moves the support base, in which a fixing mechanism that fixes the chip chuck to the support base has a plurality of leaf springs extending laterally radially from the chip chuck, the plurality of leaf springs are connected to the support base in the surroundings of the chip chuck, and the plurality of leaf springs are pulled one another, so that the chip chuck is supported in air in an inclinable manner.

A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.