An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 and a second terminal part 120. The first terminal part 110 has a first terminal base end part 111, a first terminal outer part 113, and a first bending part 112 that is provided between the first terminal base end part 111 and the first terminal outer part 113 and that is bent toward the other side on a side of the first terminal base end part 111. The second terminal part 120 has a second terminal base end part 121, a second terminal outer part 123, and a second bending part 122 that is provided between the second terminal base end part 121 and the second terminal outer part 123 and that is bent toward one side on a side of the second terminal base end part 121.

A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

According to one embodiment, there is provided a substrate bonding apparatus including a first chucking stage, a second chucking stage, and an alignment unit. The first chucking stage is configured to chuck a first substrate. The second chucking stage is disposed facing the first chucking stage. The second chucking stage is configured to chuck a second substrate. The alignment unit is configured to be inserted between the first chucking stage and the second chucking stage. The alignment unit includes a base body, a first detection element, and a second detection element. The base body includes a first main face and a second main face opposite to the first main face. The first detection element is disposed on the first main face. The second detection element is disposed on the second main face.

A multiple chip carrier assembly including a carrier having a first surface and a second surface is attached to a plurality of chips is described. The plurality of chips include a first chip and a second chip. Each of the chips has first surface with a first set of solder balls for connecting to a package and a second set of solder balls for connecting to a high signal density bridge element. A second surface of each chip is bonded to the first surface of the carrier. A package has a first surface which is connected to the first sets of solder balls of the first and second chips. A high signal density bridge element having high signal density wiring on one or more layers is connected to the second sets of solder balls of the first and second chips. The bridge element is disposed between the first surface of the package and the first surfaces of the first and second chips.

The present disclosure provides a chip transfer substrate, a chip transfer device and a chip transfer method. The chip transfer substrate includes a substrate, a plurality of bases spaced apart from each other on the substrate, the plurality of bases being configured to carry micro light emitting diodes (Micro LEDs) to be transferred and being movable on the substrate; and a plurality of distance adjusting components each arranged between two adjacent bases and configured to adjust a distance between the two adjacent bases.

A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

A thermocompression bonding (TCB) apparatus can include a wall having a height measured in a first direction and configured to be positioned between a first pressing surface and a second pressing surface of a semiconductor bonding apparatus. The apparatus can include a cavity at least partially surrounded by the wall, the cavity sized to receive a semiconductor substrate and a stack of semiconductor dies positioned between the semiconductor substrate and the first pressing surface, the stack of semiconductor dies and semiconductor substrate having a combined unpressed stack height as measured in the first direction. In some embodiments, the unpressed stack height is greater than the height of the wall, and the wall is configured to be contacted by the first pressing surface to limit movement of the first pressing surface toward the second pressing surface during a semiconductor bonding process.

A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.

A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.