A method of using an oven includes supporting a substrate on a rotatable spindle in a processing chamber of the oven and rotating the substrate. The method may also include raising the spindle with the substrate to a heating zone and activating a lamp assembly to heat a top surface of the substrate. The substrate may then be lowered to a dosing zone and a chemical vapor directed into the processing chamber above the substrate. The substrate may then be further heated using the lamp assembly and cooled.

A solder reflow oven includes a processing chamber that defines an enclosure. The enclosure includes a spindle configured to support a substrate and rotate the substrate about a central axis of the processing chamber. The spindle is also configured to move vertically along the central axis and position the substrate at different locations within the enclosure. The oven further includes a chemical delivery tube configured to direct a chemical vapor into the enclosure, a lamp assembly configured to heat a top surface of the substrate, and a lift assembly configured to move the spindle along the central axis.

Underfill materials with graded moduli for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, the underfill material between a semiconductor die and a package substrate includes a matrix material, first filler particles with a first size distribution, and second filler particles with a second size distribution different than the first size distribution. Centrifugal force may be applied to the underfill material to arrange the first and second filler particles such that the underfill material may form a first region having a first elastic modulus and a second region having a second elastic modulus different than the first elastic modulus. Once the underfill material is cured, portions of conductive pillars coupling the semiconductor die with the package substrate may be surrounded by the first region, and conductive pads of the package substrate may be surrounded by the second region.

In a method of manufacturing a semiconductor package, information with respect to a downward warpage of a reference package substrate, which may be bent with respect to a long axis and/or a short axis of the reference package substrate in applying heat to the reference package substrate to which a plurality of semiconductor chips may be attached using a die attach film (DAF), may be obtained. A package substrate, which may include a first surface to which the semiconductor chips may be attached using the DAF and a second surface opposite to the first surface, may be rotated with respect to the long axis or the short axis at an angle selected based on the information. The heat may be applied to the package substrate to cure the DAF and correct a warpage of the package substrate. Thus, warpage of the package substrate may be corrected for.

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

An apparatus and method for bonding alignment are provided. The apparatus for bonding alignment includes a press assembly and an objective lens group (105) disposed on one side of the press assembly. The press assembly includes a first chuck (103) and a rotatable second chuck (104). When support surfaces of the first and second chucks are not parallel to each other, the second chuck is rotated to make the two support surfaces parallel. A first substrate (301) is then loaded on the first chuck, and alignment marks (302) on the first substrate are observed using the objective lens group disposed on one side of the press assembly. A second substrate (501) is loaded on the second chuck, and alignment marks (502) on the second substrate are also observed with the objective lens group. Based on an observation result by the objective lens group, the two substrates are moved so that the alignment marks thereon are aligned and hence the two substrates themselves are aligned. In this method, the chucks are adjusted, prior to the alignment of the substrates. This dispenses with the need for employment of high-precision components and reduces the complexity of the apparatus. Moreover, adjusting the chucks first can ensure control of a global alignment accuracy between the substrates, and in particular, can reduce wedge-shaped errors between the substrates that may result from deformations of the substrates during bonding.

According to one embodiment, a controller is configured to calculate a matching rate of grid shapes between each semiconductor wafer of a first semiconductor wafer group and each semiconductor wafer of a second semiconductor wafer group, and generate pairing information, into which combinations of semiconductor wafers used in calculation of matching rates are registered when the matching rates fall within a predetermined range. Further, the controller is configured to select a first semiconductor wafer to be held by a first semiconductor wafer holder from the first semiconductor wafer group, and select a second semiconductor wafer from semiconductor wafers of the second semiconductor wafer group, which are paired with the first semiconductor wafer, with reference to the pairing information.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.

A method of fabricating a display device may include disposing a display panel on a stage to be parallel to an XZ-plane defined by a horizontal X-axis and a vertical Z-axis, measuring a height of a first side surface of the display panel in a direction of the Z-axis, rotating the stage such that the first side surface is parallel to a reference horizontal line in case that a result of the measured height indicates that the first side surface includes an inclined surface, moving the display panel in a direction of the Z-axis such that a first pad disposed on the first side surface overlaps the reference horizontal line, and bonding a second pad of a printed circuit board with the first pad.

In a wafer to wafer bonding method, a first wafer is vacuum suctions on a first surface of a lower stage and a second wafer is vacuum suctioned on a second surface of an upper stage. Pressure is applied to a middle portion of the first wafer by a lower push rod and pressure is applied to a middle portion of the second wafer by an upper push rod. Bonding of the first and second wafers propagates radially outwards. A bonding propagation position of the first and second wafers is detected. A ratio of protruding lengths of the lower push rod and the upper push rod is changed according to the bonding propagation position.