A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25 C. and 60 C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.

The present invention is provided with: a stage having a placing surface for a semiconductor chip, and a first heater heating the placing surface; a bonding head having a contact surface to be in contact with an subject, a second temperature sensor measuring the temperature of the subject via the contact surface, and a second heater heating the contact surface, said bonding head being driven in at least the orthogonal direction with respect to the placing surface; and a control unit measuring the temperature of the subject based on a temperature detection value of the second temperature sensor, said temperature detection value having being obtained by heating the placing surface and the contact surface to predetermined target temperatures, respectively, by means of the first and second heaters, then bringing the contact surface into contact with the subject in a state wherein heating by the second heater is stopped.

A component-handling device for removing components from a structured component supply and for depositing the removed components at a receiving device. A first turning device having a plurality of receiving units receives a component from the structured component supply at a dispensing point, to turn the received component by a first predetermined angle about the longitudinal or transverse axis of the received component, and to convey the same to a transfer point. A second turning device having a plurality of receiving units receives the component at the transfer point from a receiving unit of the first turning device, to turn the received component by a second predetermined angle about the longitudinal or transverse axis of the received component, and to convey the same to a depositing point. Position sensors detect position data of the turning devices, and position data of the components located on the receiving units.

The purpose is, in mounting a semiconductor device onto a substrate, to make it easy to identify the remaining amount of an auxiliary joining agent, to stabilize the dispensing amount of the auxiliary joining agent, and to prevent a shortage of the auxiliary joining agent. Also for the purpose of efficient maintenance of a mounting machine, provided is an auxiliary joining agent adapted to aid joining of metals and prepared by dissolving a colorant in a solvent having a reducing property of removing an oxide film on a metal surface. The auxiliary joining agent is produced by a method including a step of mixing a solvent having a reducing property of removing an oxide film on a metal surface, and a colorant having a property of dissolving in the solvent.

According to one embodiment, a controller is configured to calculate a matching rate of grid shapes between each semiconductor wafer of a first semiconductor wafer group and each semiconductor wafer of a second semiconductor wafer group, and generate pairing information, into which combinations of semiconductor wafers used in calculation of matching rates are registered when the matching rates fall within a predetermined range. Further, the controller is configured to select a first semiconductor wafer to be held by a first semiconductor wafer holder from the first semiconductor wafer group, and select a second semiconductor wafer from semiconductor wafers of the second semiconductor wafer group, which are paired with the first semiconductor wafer, with reference to the pairing information.

A universal chip batch-bonding apparatus and method. The apparatus comprises a material pick-and-place area and a transfer work area. The material pick-and-place area comprises a blue tape pick-and-place area (110) for providing a chip (113) and a substrate pick-and-place area (120) for placing a substrate (123), the blue tape pick-and-place area (110) and the substrate pick-and-place area (120) being separately arranged at two ends of the transfer work area. The transfer work area sequentially comprises a chip pickup and separation area (210), a chip alignment and fine-tuning area (220), and a chip batch-bonding area (230) in a direction running from the blue tape pick-and-place area (110) to the substrate pick-and-place area (120). A chip carrier transfer apparatus (300) is provided in the transfer work area, and the chip carrier transfer apparatus (300) passes through the transfer work area and is used to move and supply materials among the chip pickup and separation area (210), the chip alignment and fine-tuning area (220), and the chip batch-bonding area (230). By means of a compatible design, the apparatus is suitable for both die-up and die-down attachment modes, expanding the application scope of the apparatus. In addition, the modular design can be configured according to requirements, increasing market potential.

A batch bonding apparatus and bonding method. The bonding apparatus comprises: a chip supply unit (10) for providing a chip (60) to be bonded; a substrate supply unit (20) for providing a substrate; a transfer unit (40) for transferring the chip (60) between the chip supply unit (10) and the substrate supply unit (20); and a pickup unit (30) disposed above the chip supply unit (10), for picking up the chip (60) from the chip supply unit (10) and uploading the chip (60) to the transfer unit (40) after flipping a marked surface of the chip (60) in a required direction. In the present invention pickup of each chip is completed individually, but transfer processes and bonding processes can be carried out for multiple chips at the same time, greatly increasing yield.

A stack type power module includes: a power semiconductor having a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor, and a collector having a pad shape on another surface of the power semiconductor; an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a metal layer that has a lower surface with which the collector is in contact; and a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to the metal layer that has an upper surface with which each of the gate and the emitter is in contact.

A bonding apparatus bonds a semiconductor die, which has a first mam surface provided with a bump electrode, to a substrate by means of thermo-compression, with a thermo-compression film being interposed therebetween. The bonding apparatus includes: an intermediate stage that has a die placing surface on which the semiconductor die is placed such that the die placing surface faces the first main surface; and a bonding tool which detachably holds a second main surface of the semiconductor die that is placed on the intermediate stage, the second main surface being on the reverse side of the first main surface. The intermediate stage has a push-up mechanism which applies, to the first main surface of the semiconductor die, a force for separating the semiconductor die therefrom in the normal direction of the die placing surface (in a Z-axis direction).

A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.