A bonding apparatus includes a stage on which a substrate is seated, a gantry installed above the stage, a bonding unit configured to bond a chip to the substrate while moving along the gantry, and a control part moving the bonding unit to align the bonding unit with a bonding position on the substrate, controlling the bonding unit to allow the bonding unit to bond the chip at the bonding position, determining a movement distance of the bonding unit based on a weighted sum of a number of continuous operations and an idle time of the bonding unit.

Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.

A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).

Sintering device (10) for sintering at least one electronic assembly (BG), having a lower die (20) and an upper die (30) which is slidable towards the lower die (20), or a lower die (20) which is slidable towards the upper die (30), wherein the lower die (20) forms a support for the assembly (BG) to be sintered and the upper die (30) comprises a receptacle which receives a pressure pad (32) for exerting pressure directed towards the lower die (20) and which comprises a delimitation wall (34) which laterally surrounds the pressure pad (32), and wherein the delimitation wall (34) has an outer delimitation wall (34a) and an inner delimitation wall (34b) which is surrounded in an adjacent manner by the outer delimitation wall (34a), and wherein the inner delimitation wall (34b) is mounted so as to be slidable towards the outer delimitation wall (34a) and, when pressure in the direction of the upper die (30) is exerted on the pressure pad (32), is mounted so as to be slid in the direction of the lower die (20), whereby, following the placing of the inner delimitation wall (34b) on the lower die (20), the pressure pad (32) is displaceable in the direction of the lower die (20).

A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.

A uniform pressure gang bonding device and fabrication method are presented using an expandable upper chamber with an elastic surface. Typically, the elastic surface is an elastomer material having a Young's modulus in a range of 40 to 1000 kilo-Pascal (kPA). After depositing a plurality of components overlying a substrate top surface, the substrate is positioned over the lower plate, with the top surface underlying and adjacent (in close proximity) to the elastic surface. The method creates a positive upper chamber medium pressure differential in the expandable upper chamber, causing the elastic surface to deform. For example, the positive upper chamber medium pressure differential may be in the range of 0.05 atmospheres (atm) and 10 atm. Typically, the elastic surface deforms between 0.5 millimeters (mm) and 20 mm, in response to the positive upper chamber medium pressure differential.

An apparatus for executing a direct transfer of a semiconductor device die from a first substrate to a second substrate. The apparatus includes a first substrate conveyance mechanism movable in two axes. A micro-adjustment mechanism is coupled with the first substrate conveyance mechanism and is configured to hold the first substrate and to make positional adjustments on a scale smaller than positional adjustments caused by the first substrate conveyance mechanism. The micro-adjustment mechanism includes a micro-adjustment actuator having a distal end and a first substrate holder frame that is movable via contact with the distal end of the micro-adjustment actuator. A second frame is configured to secure the second substrate such that a transfer surface is disposed facing the semiconductor device die disposed on a surface of the first substrate. A transfer mechanism is configured to press the semiconductor device die into contact with the transfer surface of the substrate.

A bonder includes a first chuck unit 1A, a second chuck unit 1B, a first base 21A, a second base 21B, and a first floating mechanism 3A. The first chuck unit 1A and the second chuck unit 1B are chuck units in a pair including respective suction surfaces for suction of bonding targets and are arranged while respective suction surfaces 11a and 11b face each other. The first base 21A and the second base 21B support the first chuck unit 1A and the second chuck unit 1B respectively. The first floating mechanism 3A applies gas pressure to a back surface 12a of the first chuck unit 1A to float the first chuck unit 1A from the first base 21A, thereby moving the suction surface 11a of the first chuck unit 1A toward the suction surface 11b of the second chuck unit 1B.

An apparatus for executing a direct transfer of a semiconductor device die from a first substrate to a second substrate. The apparatus includes a first substrate conveyance mechanism movable in two axes. A micro-adjustment mechanism is coupled with the first substrate conveyance mechanism and is configured to hold the first substrate and to make positional adjustments on a scale smaller than positional adjustments caused by the first substrate conveyance mechanism. The micro-adjustment mechanism includes a micro-adjustment actuator having a distal end and a first substrate holder frame that is movable via contact with the distal end of the micro-adjustment actuator. A second frame is configured to secure the second substrate such that a transfer surface is disposed facing the semiconductor device die disposed on a surface of the first substrate. A transfer mechanism is configured to press the semiconductor device die into contact with the transfer surface of the substrate.