A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Method and device for compression bonding are disclosed. During compression bonding a chip to a substrate, an anti-adhesion layer on a stage is provided to contact with a solder resist layer on the substrate. The solder resist layer will not stick to the anti-adhesion layer such that the reduction of bonding precision due to the solder resist layer remains residues on the compression bonding device is preventable.

A bonding system (90) is provided with a bonding device (80) for bonding semiconductor chips (45) to individual substrates (41), and a substrate holder (10) for holding the individual substrates (41), the bonding device (80) being provided with a stage (31) for fixing, by suction, the substrate holder (10) on a placement surface (13a), the substrate holder (10) being provided with a plate-shaped base (11) and a positioning member (21) that is provided on the base (11) and that defines the position of the individual substrates (41), the base (11) having an upper surface (11a) on which the individual substrates (41) are placed and a lower surface (11b) that is fixed by suction onto the placement surface (31a).

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted to the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a substance-to-substance bond between the joining members.

Method and device for compression bonding are disclosed. During compression bonding a chip to a substrate, an anti-adhesion layer on a stage is provided to contact with a solder resist layer on the substrate. The solder resist layer will not stick to the anti-adhesion layer such that the reduction of bonding precision due to the solder resist layer remains residues on the compression bonding device is preventable.

A solder reflow apparatus includes a vapor generating chamber configured to accommodate a heat transfer fluid and to accommodate saturated vapor generated by heating the heat transfer fluid; a heater configured to heat the heat transfer fluid accommodated in the vapor generating chamber; a substrate stage configured to be movable upward and downward within the vapor generating chamber, the substrate stage including a seating surface; vapor passages penetrating the substrate stage and configured to allow the vapor to move therethrough; and suction passages penetrating the substrate stage to be open to the seating surface and in which at least a partial vacuum is generated.

An apparatus for a direct transfer of a semiconductor device die from a wafer tape to a substrate. A first frame holds the wafer tape and a second frame secures the substrate. The second frame holds the substrate such that a transfer surface is disposed facing the semiconductor device die on a first side of the wafer tape. Two or more needles are disposed adjacent a second side of the wafer tape opposite the first side. A length of the two or more needles extends in a direction toward the wafer tape. A needle actuator actuates the two or more needles into a die transfer position at which at least one needle of the two or more needles presses on the second side of the wafer tape to press a semiconductor device die of the one or more semiconductor device die into contact with the transfer surface of the substrate.

An apparatus for a direct transfer of a semiconductor device die from a wafer tape to a substrate. A first frame holds the wafer tape and a second frame secures the substrate. The second frame holds the substrate such that a transfer surface is disposed facing the semiconductor device die on a first side of the wafer tape. Two or more needles are disposed adjacent a second side of the wafer tape opposite the first side. A length of the two or more needles extends in a direction toward the wafer tape. A needle actuator actuates the two or more needles into a die transfer position at which at least one needle of the two or more needles presses on the second side of the wafer tape to press a semiconductor device die of the one or more semiconductor device die into contact with the transfer surface of the substrate.

A semiconductor manufacturing apparatus includes a stage capable of holding thereon an interconnection substrate. A tool presses the interconnection substrate and a semiconductor chip against each other between the tool and the stage. The tool includes a main body portion that has a holding surface holding thereon the semiconductor chip. A first protruding portion is provided along an outer edge of the holding surface and protrudes from the holding surface toward the stage. A second protruding portion is provided outside of the first protruding portion along the outer edge of the holding surface and protrudes from the holding surface toward the stage. A groove portion is provided between the first protruding portion and the second protruding portion.

In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.