A method for calibrating a wire clamp device includes: preparing a wire clamp device provided with a pair of arm parts having tips for clamping a wire, the arms extending from the tips toward base ends, and a drive part provided with a piezoelectric element for drive, connected to the base ends of the pair of arm parts and opening/closing the tips of the pair of arm parts; a step of detecting, by electrical continuity between the tips, a timing at which the pair of arm parts enters a closed state when the piezoelectric element for drive is driven, and acquiring a reference voltage; and a step of calibrating, on the basis of the reference voltage, an application voltage to be applied to the piezoelectric element for drive. Thus, it is possible to perform accurate and stable wire bonding.

Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) inserted; and a controller (80). The controller (80) is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) inserted; and a controller (80). The controller (80) is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

A methodology and medium for regular and predictable cleaning the support hardware such as capillary tube in semiconductor assembly equipment components, while it is still in manual, semi-automated, and automated assembly are disclosed. The cleaning material may include a cleaning pad layer and one or more intermediate layers that have predetermined characteristics.

A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Systems, methods, and devices for 3D packaging. In some embodiments, a semiconductor package includes a first die and a second die. The first die includes a first bonding pad on a top of the first die and near a first edge of the first die. The second die includes a second bonding pad on a top of the second die and near a second edge of the second die. A pillar is located on the second bonding pad. The first die is mounted on top of the second die such that the first edge is parallel to the second edge and offset from the second edge such that the pillar is exposed. A wire is bonded to a bonding surface of the pillar and bonded to a bonding surface of the first bonding pad.

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

A semiconductor device, includes a die pad that has a first main surface and a second main surface located on the opposite side of the first main surface; a lead arranged next to the die pad; a semiconductor chip that has a surface, a first electrode and a second electrode formed on the surface, and a reverse side located on the opposite side of the surface, and is mounted on a chip mounting area of the first main of the die pad; a first wire that electrically couples the first electrode of the semiconductor chip and the lead; a second wire that electrically couples the second electrode of the semiconductor chip and the die pad; and a sealed body that seals the semiconductor chip, the first wire, and the second wire.