A method of operating an ultrasonic bonding machine is provided. The method includes the steps of: (a) imaging at least one of (i) a semiconductor element supported by a substrate, and (ii) a clamping structure adapted for securing the substrate during a bonding operation; and (b) determining if a relative position of the semiconductor element and the clamping structure is acceptable using predetermined criteria and information from step (a).

A method for calibrating a second bonding machine based on a calibrated first bonding machine is disclosed. The first bonding machine includes a first ultrasonic transducer. The second bonding machine includes a second ultrasonic transducer and a power supply. The method includes providing a first electrical calibration supply that causes the first ultrasonic transducer to oscillate at a first calibration amplitude when it is damped by a mechanical damping, providing a second electrical calibration supply that causes the second ultrasonic transducer to oscillate at the same calibration amplitude when it is damped by the same mechanical damping. The second bonding machine is adapted to modify a second control signal based on a first electrical parameter of the first electrical calibration supply and on a second electrical parameter of the second electrical calibration supply in order to generate a modified second control signal, provide the modified second control signal to the power supply in order to cause the second power supply to generate a second electrical supply, and provide the second electrical supply to the second ultrasonic transducer.

A bonding apparatus has a bonding tool for bonding a wire to a bonding surface, a bonding tool retainer configured to releasably retain the bonding tool, a bonding tool holder configured to hold at least one bonding tool, a bonding tool manipulator configured to transfer said bonding tool between said bonding tool holder and said bonding tool retainer, and a bonding tool guide configured to guide said bonding tool to be received by said bonding tool retainer during transfer by said bonding tool manipulator.

A bonding tool for bonding two conductive plates in contact with each other by pressing the bonding tool against the two conductive plates while vibrating a bonding end portion thereof in a direction parallel to the conductive plates. The bonding end portion of the bonding tool includes a bonding base having an end surface, the end surface having a protrusion area that has two sides facing and parallel to each other in a first direction that is parallel to the end surface, a plurality of protrusions provided in the protrusion area of the end surface, and a suppression portion provided on the end surface along the two sides of the protrusion area. The bonding end portion is configured to vibrate in the first direction.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

A wedge bonding tool including a body portion including a tip portion is provided. The tip portion includes a working surface configured to contact a wire material during formation of a wedge bond. A plurality of notches are defined by one or more surfaces of the body portion.

A wedge bonding tool including a body portion including a tip portion is provided. The tip portion includes a working surface configured to contact a wire material during formation of a wedge bond. A plurality of notches are defined by one or more surfaces of the body portion.

A method comprises heating a first electrically conductive layer that is to be electrically contacted, and that is arranged on a first element, and pressing a first end of a bonding wire on the first electrically conductive layer by exerting pressure to the first end of the bonding wire, and further by exposing the first end of the bonding wire to ultrasonic energy, thereby deforming the first end of the bonding wire and creating a permanent substance-to-substance bond between the first end of the bonding wire and the first electrically conductive layer. The bonding wire either comprises a rounded cross section with a diameter of at least 125 m or a rectangular cross section with a first width of at least 500 m and a first height of at least 50 m.

A wire bonding machine is provided. The wire bonding machine includes: (a) a wire bonding tool; (b) a wire guide for guiding a wire to a position beneath a bonding surface of the wire bonding tool, the wire guide being configured for movement between (i) an engagement position with respect to the wire bonding tool and (ii) a non-engagement position with respect to the wire bonding tool; and a cleaning station for cleaning at least a portion of a tip of the wire bonding tool when the wire guide is in the non-engagement position.

A method of operating an ultrasonic bonding machine is provided. The method includes the steps of: (a) imaging at least one of (i) a semiconductor element supported by a substrate, and (ii) a clamping structure adapted for securing the substrate during a bonding operation; and (b) determining if a relative position of the semiconductor element and the clamping structure is acceptable using predetermined criteria and information from step (a).