A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature.