Patent classifications
H01L2224/80205
Circuit board and semiconductor module
A circuit board includes: a ceramic substrate that has a first surface and a second surface; a first metal part that has a first metal plate joined to the first surface and a protrusion projecting from a front surface of the first metal plate; and a second metal part that has a second metal plate joined to the second surface. When the ceramic substrate is equally divided into first to third sections along a longer side direction, V.sub.1, V.sub.2, V.sub.3, V.sub.4, V.sub.5, and V.sub.6 are numbers satisfying formula V.sub.4/V.sub.1+V.sub.6/V.sub.32(V.sub.5/V.sub.2), 0.5V.sub.4/V.sub.12, 0.5V.sub.5/V.sub.22, and 0.5V.sub.6/V.sub.32.
Die encapsulation in oxide bonded wafer stack
Structures and methods of fabricating semiconductor wafer assemblies that encapsulate one or die in a cavity etched into an oxide bonded semiconductor wafer stack. The methods generally include the steps of positioning the die in the cavity, mechanically and electrically mounting the die to the wafer stack, and encapsulating the die within the cavity by bonding a lid wafer to the wafer stack in one of multiple ways. Semiconductor processing steps are applied to construct the assemblies (e.g., deposition, annealing, chemical and mechanical polishing, etching, etc.) and connecting the die (e.g., bump bonding, wire interconnecting, ultrasonic bonding, oxide bonding, etc.) according to the embodiments described above.
Die encapsulation in oxide bonded wafer stack
Structures and methods of fabricating semiconductor wafer assemblies that encapsulate one or die in a cavity etched into an oxide bonded semiconductor wafer stack. The methods generally include the steps of positioning the die in the cavity, mechanically and electrically mounting the die to the wafer stack, and encapsulating the die within the cavity by bonding a lid wafer to the wafer stack in one of multiple ways. Semiconductor processing steps are applied to construct the assemblies (e.g., deposition, annealing, chemical and mechanical polishing, etching, etc.) and connecting the die (e.g., bump bonding, wire interconnecting, ultrasonic bonding, oxide bonding, etc.) according to the embodiments described above.
Electronic module
The present invention relates to an electronic module. In particular, to an electronic module which includes one or more components embedded in an installation base. The electronic module can be a module like a circuit board, which includes several components, which are connected to each other electrically, through conducting structures manufactured in the module. The components can be passive components, microcircuits, semiconductor components, or other similar components. Components that are typically connected to a circuit board form one group of components. Another important group of components are components that are typically packaged for connection to a circuit board. The electronic modules to which the invention relates can, of course, also include other types of components.
MANUFACTURING PROCESS FOR SEPARATING LOGIC AND MEMORY ARRAY
A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.
METHOD AND APPARATUS TO CONTROL TRANSFER PARAMETERS DURING TRANSFER OF SEMICONDUCTOR DEVICES
An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.
METHOD AND APPARATUS TO CONTROL TRANSFER PARAMETERS DURING TRANSFER OF SEMICONDUCTOR DEVICES
An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.
POWER SEMICONDUCTOR MODULE
Provided is a power semiconductor module including: a metal base plate; an insulating substrate arranged on the metal base plate and provided with an electrode; a semiconductor element arranged on the insulating substrate; a case arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting material filled into a space defined by the metal base plate and the case so as to encapsulate the insulating substrate and the semiconductor element. The potting material includes: a silicone gel; and a conductivity-imparting agent that is added to the gel and contains a silicon atom and an ionic group.
POWER SEMICONDUCTOR MODULE
Provided is a power semiconductor module including: a metal base plate; an insulating substrate arranged on the metal base plate and provided with an electrode; a semiconductor element arranged on the insulating substrate; a case arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting material filled into a space defined by the metal base plate and the case so as to encapsulate the insulating substrate and the semiconductor element. The potting material includes: a silicone gel; and a conductivity-imparting agent that is added to the gel and contains a silicon atom and an ionic group.
Display device including a reinforcing member
A display device includes a flexible base layer including a first portion and a second portion. A display unit is disposed on a first surface of the first portion. The display unit includes a light emitting element. A driving circuit is disposed on a first surface of the second portion. The driving circuit includes a driving chip. A first support member is disposed on a second surface of the first portion opposite the first surface. A second support member is disposed on a second surface of the second portion. The second support member includes a first opening overlapping the driving circuit. The second surface of the second portion is on an opposite side of the second portion from the first surface of the second portion. A first reinforcing member is disposed in the first opening. The first reinforcing member includes a different material from the second support member.