A semiconductor device has a shielding layer over a semiconductor package. A plurality of slot lines define a location to form a slot in the shielding layer. The slot is formed in the shielding layer by cutting along the slot lines with a laser controlled by a scanner to read the slot lines. The slot lines include a left boundary slot line and right boundary slot line. The slot can be cut in the shielding layer by performing an edge cut along the slot lines, and performing a peel back to form the slot in the shielding layer. Alternatively, the slot can be cut in the shielding layer by performing a first cut in a first direction along the slot lines, and performing a second cut in a second direction opposite the first direction along the slot lines to form the slot in the shielding layer.

A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Methods and systems for a semiconductor device package with a die to interposer wafer first bond are disclosed and may include bonding a plurality of semiconductor die comprising electronic devices to an interposer wafer, and applying an underfill material between the die and the interposer wafer. Methods and systems for a semiconductor device package with a die-to-packing substrate first bond are disclosed and may include bonding a first semiconductor die to a packaging substrate, applying an underfill material between the first semiconductor die and the packaging substrate, and bonding one or more additional die to the first semiconductor die. Methods and systems for a semiconductor device package with a die-to-die first bond are disclosed and may include bonding one or more semiconductor die comprising electronic devices to an interposer die.

The invention relates to a method for producing a solder connection between a plurality of components (12A, 12B) in a process chamber (74) sealed off from its surroundings by heating and melting solder material (16) which is arranged between the components (12A, 12B) to be connected. It is proposed that the components (12A, 12B) to be connected are provisionally connected with a bonding material (18) to form a solder group (10) in which the components (12A, 12B) are fixed relative to one another in a joining position.

The display device includes a flexible base layer including a first region and a second region located around the first; a display unit on one surface of the first region and including a light emitting element; a driving circuit on the second region and including a plurality of first bumps arranged in a first row and a plurality of second bumps arranged in a second row, the driving circuit includes a third bump in the first row and disposed outward relative to the plurality of first bumps, a first and second reference bump each disposed at a center of the plurality of first and second bumps that are disposed along a reference line defined in a column direction vertically intersecting a row direction, the remaining first and second bumps excluding the first reference bump and the second reference bump arranged to have a preset slope with respect to the reference line.

A method of manufacturing an electronic package is disclosed. The described method includes (a) placing an electronic component on at least one layer structure; (b) encapsulating the electronic component by an encapsulant in a pressureless way; and (c) forming at least one further layer structure at the layer structure to thereby form a stack beneath the encapsulated electronic component. A further described electronic package includes (a) a stack comprising at least one layer structure and at least one further layer structure; (b) an electronic component being placed on the stack; and (c) an encapsulant encapsulating the electronic component, wherein the encapsulant has been formed in a pressureless way. Further described is an electronic device comprising such an electronic package.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

A multi-chip package structure includes a chip interconnect bridge, a fan-out redistribution layer structure, a first integrated circuit chip, and a second integrated circuit chip. The chip interconnect bridge includes contact pads disposed on a top side of the chip interconnect bridge. The fan-out redistribution layer structure is disposed around sidewalls of the chip interconnect bridge and over the top side of the chip interconnect bridge. The first and second integrated circuit chips are direct chip attached to an upper surface of the fan-out redistribution layer structure, wherein the fan-out redistribution layer structure includes input/output connections between the contact pads on the top side of the chip interconnect bridge and the first and second integrated circuit chips.

In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.