H01L2224/8123

MICRO-LED CHIPS AND METHODS FOR MANUFACTURING THE SAME AND DISPLAY DEVICES
20200251641 · 2020-08-06 ·

The present disclosure relates to micro-LED chips, methods for manufacturing the same, and display devices. The micro-LED chip includes: a driving backplane including at least one first electrode, a groove being provided above the first electrode, and the first electrode being located at a bottom of the groove; the groove being filled with a conductive material, and the conductive material being obtained by curing a corresponding conductive ink; and a light emitting chip including at least one second electrode; and the first electrode is connected to the second electrode through the conductive material.

High yield package assembly technique

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

High yield package assembly technique

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

Semiconductor chip package with resilient conductive paste post and fabrication method thereof
10685943 · 2020-06-16 · ·

A semiconductor chip package includes a substrate; a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad; a conductive paste post printed on the exposed central area of the bond pad; and a bonding wire secured to a top surface of the conductive paste post. The conductive paste post comprises copper paste.

Dicing Method for Stacked Semiconductor Devices
20200105600 · 2020-04-02 ·

A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.

Dicing Method for Stacked Semiconductor Devices
20200105600 · 2020-04-02 ·

A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.

Micro-LED array transfer

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.

Micro-LED array transfer

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.

Semiconductor Bonding Structures and Methods

A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

Method for transferring electronic device

A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.