A semiconductor device has a first conductive layer including a plurality of conductive traces. The first conductive layer is formed over a substrate. The conductive traces are formed with a narrow pitch. A first semiconductor die and second semiconductor die are disposed over the first conductive layer. A first encapsulant is deposited over the first and second semiconductor die. The substrate is removed. A second encapsulant is deposited over the first encapsulant. A build-up interconnect structure is formed over the first conductive layer and second encapsulant. The build-up interconnect structure includes a second conductive layer. A first passive device is disposed in the first encapsulant. A second passive device is disposed in the second encapsulant. A vertical interconnect unit is disposed in the second encapsulant. A third conductive layer is formed over second encapsulant and electrically connected to the build-up interconnect structure via the vertical interconnect unit.

A semiconductor device includes a board having a solder resist layer with first and second openings on a first surface, and a first electrode on the first surface, a portion thereof exposed in the first opening and electrically connected to the board. A second electrode is located on the first surface having a portion exposed in the second opening and electrically connected to the board. A portion of the second electrode is covered by the solder resist layer. A first solder bump is on the first electrode and covers a side surface. A second solder bump is on the second electrode. A semiconductor chip has a first region and a second region facing the first surface. A third electrode is in the first region and electrically connected to the first solder bump. A fourth electrode is in the second region and electrically connected to the second solder bump.

A semiconductor device includes a board having a solder resist layer with first and second openings on a first surface, and a first electrode on the first surface, a portion thereof exposed in the first opening and electrically connected to the board. A second electrode is located on the first surface having a portion exposed in the second opening and electrically connected to the board. A portion of the second electrode is covered by the solder resist layer. A first solder bump is on the first electrode and covers a side surface. A second solder bump is on the second electrode. A semiconductor chip has a first region and a second region facing the first surface. A third electrode is in the first region and electrically connected to the first solder bump. A fourth electrode is in the second region and electrically connected to the second solder bump.

A metal pillar with cushioned tip is disclosed. The cushioned tip offsets height difference among metal pillars. So that the height difference among metal pillars gives no significant effect to electrical coupling. The cushioned tip is a metal sponge. Additional one embodiment shows a second metal is plated on a tip of the metal sponge. A hardness of the second metal is greater than a hardness of a metal of the metal sponge, so that the second metal can stab into a corresponding metal sponge for electrical coupling.

A metal pillar with cushioned tip is disclosed. The cushioned tip offsets height difference among metal pillars. So that the height difference among metal pillars gives no significant effect to electrical coupling. The cushioned tip is a metal sponge. Additional one embodiment shows a second metal is plated on a tip of the metal sponge. A hardness of the second metal is greater than a hardness of a metal of the metal sponge, so that the second metal can stab into a corresponding metal sponge for electrical coupling.

A light-emitting device, a light-emitting assembly and an integrated circuit (IC) flip-chip are provided. The light-emitting device includes the IC flip-chip, a plurality of light-emitting diode (LED) flip-chips and a substrate. The IC flip-chip includes a plurality of flip-chip pads. The LED flip-chips are spaced apart from the IC flip-chip. The substrate carries the IC flip-chip and the LED flip-chips. The LED flip-chips have a plurality of electrodes, and the flip-chip pads of the IC flip-chip and the electrodes of the LED flip-chips are disposed on the substrate by way of soldering. The LED flip-chips are electrically coupled to the IC flip-chip through the substrate.

A light-emitting device, a light-emitting assembly and an integrated circuit (IC) flip-chip are provided. The light-emitting device includes the IC flip-chip, a plurality of light-emitting diode (LED) flip-chips and a substrate. The IC flip-chip includes a plurality of flip-chip pads. The LED flip-chips are spaced apart from the IC flip-chip. The substrate carries the IC flip-chip and the LED flip-chips. The LED flip-chips have a plurality of electrodes, and the flip-chip pads of the IC flip-chip and the electrodes of the LED flip-chips are disposed on the substrate by way of soldering. The LED flip-chips are electrically coupled to the IC flip-chip through the substrate.

To improve reliability of a semiconductor device, in a flip-chip bonding step, a solder material that is attached to a tip end surface of a projecting electrode in advance and a solder material that is applied in advance over a terminal (bonding lead) are heated and thereby integrated and electrically connected to each other. The terminal includes a wide part (a first portion) with a first width W1 and a narrow part (a second portion) with a second width W2. When the solder material is heated, the thickness of the solder material arranged over the narrow part becomes smaller than the thickness of the solder material arranged in the wide part. Then, in the flip-chip bonding step, a projecting electrode is arranged over the narrow part and bonded onto the narrow part. Thus, the amount of protrusion of the solder material can be reduced.

To improve reliability of a semiconductor device, in a flip-chip bonding step, a solder material that is attached to a tip end surface of a projecting electrode in advance and a solder material that is applied in advance over a terminal (bonding lead) are heated and thereby integrated and electrically connected to each other. The terminal includes a wide part (a first portion) with a first width W1 and a narrow part (a second portion) with a second width W2. When the solder material is heated, the thickness of the solder material arranged over the narrow part becomes smaller than the thickness of the solder material arranged in the wide part. Then, in the flip-chip bonding step, a projecting electrode is arranged over the narrow part and bonded onto the narrow part. Thus, the amount of protrusion of the solder material can be reduced.

According to an embodiment of the present invention, a method for forming a coil comprises patterning a first mask on a handle wafer, and depositing a conductive material on exposed portions of the handle wafer to partially define the coil. A second mask is patterned on portions of the first mask and the conductive material. A solder material is deposited on a portion of the conductive material to partially define a support member. The solder material is bonded to a wafer, and the handle wafer is separated from the conductive material.