A semiconductor device includes a leadframe that includes contact pins and a semiconductor die that has protruding connection formations. A flexible support member is disposed between the leadframe and the semiconductor die and supports the semiconductor die. The flexible support member has electrically conductive lines that extend between the leadframe and the semiconductor die. The electrically conductive lines of the flexible support member are electrically coupled with the contact pins of the leadframe and with the connection formations of the semiconductor die.

A printed electrical connection structure includes a substrate having one or more electrical connection pads and a micro-transfer printed component having one or more connection posts. Each connection post is in electrical contact with a connection pad. A resin is disposed between and in contact with the substrate and the component. The resin has a reflow temperature less than a cure temperature. The resin repeatedly flows at the reflow temperature when temperature-cycled between an operating temperature and the reflow temperature but does not flow after the resin is exposed to a cure temperature. A solder can be disposed on the connection post or the connection pad. After printing and reflow, the component can be tested and, if the component fails, another component is micro-transfer printed to the substrate, the resin is reflowed again, the other component is tested and, if it passes the test, the resin is finally cured.

A printed electrical connection structure includes a substrate having one or more electrical connection pads and a micro-transfer printed component having one or more connection posts. Each connection post is in electrical contact with a connection pad. A resin is disposed between and in contact with the substrate and the component. The resin has a reflow temperature less than a cure temperature. The resin repeatedly flows at the reflow temperature when temperature-cycled between an operating temperature and the reflow temperature but does not flow after the resin is exposed to a cure temperature. A solder can be disposed on the connection post or the connection pad. After printing and reflow, the component can be tested and, if the component fails, another component is micro-transfer printed to the substrate, the resin is reflowed again, the other component is tested and, if it passes the test, the resin is finally cured.

A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

Provided is a double-sided cooling structure for a semiconductor device using a low processing temperature and reduced processing time utilizing solid phase diffusion bonding. The fabrication method for this system is provided. The semiconductor device 1 comprising: a mounting substrate 70; a semiconductor chip 10 disposed on the mounting substrate 70 and a semiconductor substrate 26, a source pad electrode SP and a gate pad electrode GP disposed on a surface of the semiconductor substrate 26, and a drain pad electrode 36 disposed on a back side surface of the semiconductor substrate 26 to be contacted with the mounting substrate 70; and a source connector SC disposed on the source pad electrode SP. The mounting substrate 70 and the drain pad electrode 36 are bonded by using solid phase diffusion bonding.

Integrated circuit (IC) packages employing split, double-sided IC metallization structures to facilitate a semiconductor die module employing stacked dice, and related fabrication methods are disclosed. Multiple IC dice in the IC package are stacked and bonded together in a back-to-back, top and bottom IC die configuration in an IC die module, which can minimize the height of the IC package. The metallization structure is split between separate top and bottom metallization structures adjacent to respective top and bottom surfaces of the IC die module to facilitate die-to-die and external electrical connections to the dice. The top and bottom metallization structures can be double-sided by exposing substrate interconnects on respective inner and outer surfaces for respective die and external electrical interconnections. In other aspects, a compression bond is included between the IC dice mounted together in a back-to-back configuration to further minimize the overall height of the IC package.

A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.