A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

A method of manufacturing a multi-layer electronics package includes attaching a base insulating substrate to a frame having an opening therein and such that the frame is positioned above and/or below the base insulating substrate to provide support thereto. A first conductive wiring layer is applied on the first side of the base insulating substrate, and vias are formed in the base insulating substrate. A second conductive wiring layer is formed on the second side of the base insulating substrate that covers the vias and the exposed portions of the first conductive wiring layer and at least one additional insulating substrate is bonded to the base insulating substrate. Vias are formed in each additional insulating substrate and an additional conductive wiring layer is formed on each of the additional insulating substrate. The described build-up forms a multilayer interconnect structure, with the frame providing support for this build-up.

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

A method for chip on wafer bonding is provided. The method includes the formation of a plurality of posts on at least one of a chip and a wafer, and a like plurality of contacts on the other of the chip and the wafer. After formation, a contact surface of each post is planarized, the respective planarized contact surface having a surface roughness height. A bonding material is then applied to at least one of the chip in a thickness no greater than the surface roughness height of the contact surface. The posts are then temporarily bonded to the contacts using the bonding material to stabilize a position of the chip relative to the wafer for permanent diffusion bonding of the chip to the wafer.

A semiconductor device includes a substrate including a substrate top surface; interconnects connected to the substrate and extending above the substrate top surface; a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and a metal enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure peripherally surrounds the interconnects.

A semiconductor package includes a substrate, a dielectric layer, at least one conductive pillar and an electrical device. The dielectric layer is disposed on the substrate and defines at least one through hole corresponding to the respective first pad of the substrate. The conductive pillar is disposed in the respective through hole. The conductive pillar includes a body portion and a cap portion. The body portion is physically connected to the cap portion, and the cap portion is electrically connected to the first pad. A maximum width of the cap portion is greater than a maximum width of the body portion. The electrical device is disposed on the dielectric layer and electrically connected to the body portion of the conductive pillar.

A method of manufacturing a multi-layer electronics package includes attaching a base insulating substrate to a frame having an opening therein and such that the frame is positioned above and/or below the base insulating substrate to provide support thereto. A first conductive wiring layer is applied on the first side of the base insulating substrate, and vias are formed in the base insulating substrate. A second conductive wiring layer is formed on the second side of the base insulating substrate that covers the vias and the exposed portions of the first conductive wiring layer and at least one additional insulating substrate is bonded to the base insulating substrate. Vias are formed in each additional insulating substrate and an additional conductive wiring layer is formed on each of the additional insulating substrate. The described build-up forms a multilayer interconnect structure, with the frame providing support for this build-up.

A method to produce a semiconductor package or system-on-flex package comprising bonding structures for connecting IC/chips to fine pitch circuitry using a solid state diffusion bonding is disclosed. A plurality of traces is formed on a substrate, each respective trace comprising five different conductive materials having different melting points and plastic deformation properties, which are optimized for both diffusion bonding of chips and soldering of passives components.