Provided is a semiconductor device including a conductive member including a main surface facing one side in a thickness direction; a semiconductor element including a plurality of pads facing the main surface of the conductive member; and a plurality of electrodes protruding from the plurality of pads toward the other side in the thickness direction. The conductive member includes a plurality of recessed portions recessed from the main surface toward the other side in the thickness direction. The semiconductor device further includes a bonding layer that is conductive and that is arranged in each of the plurality of recessed portions. The plurality of electrodes are separately inserted into the plurality of recessed portions. The conductive member and the plurality of electrodes are bonded through the bonding layers.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A microelectronic device has bump bonds and an inductor on a die. The microelectronic device includes first lateral conductors extending along a terminal surface of the die, wherein at least some of the first lateral conductors contact at least some of terminals of the die. The microelectronic device also includes conductive columns on the first lateral conductors, extending perpendicularly from the terminal surface, and second lateral conductors on the conductive columns, opposite from the first lateral conductors, extending laterally in a plane parallel to the terminal surface. A first set of the first lateral conductors, the conductive columns, and the second lateral conductors provide the bump bonds of the microelectronic device. A second set of the first lateral conductors, the conductive columns, and the second lateral conductors are electrically coupled in series to form the inductor. Methods of forming the microelectronic device are also disclosed.

A microelectronic device has bump bonds and an inductor on a die. The microelectronic device includes first lateral conductors extending along a terminal surface of the die, wherein at least some of the first lateral conductors contact at least some of terminals of the die. The microelectronic device also includes conductive columns on the first lateral conductors, extending perpendicularly from the terminal surface, and second lateral conductors on the conductive columns, opposite from the first lateral conductors, extending laterally in a plane parallel to the terminal surface. A first set of the first lateral conductors, the conductive columns, and the second lateral conductors provide the bump bonds of the microelectronic device. A second set of the first lateral conductors, the conductive columns, and the second lateral conductors are electrically coupled in series to form the inductor. Methods of forming the microelectronic device are also disclosed.

Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.

Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A package structure includes a first encapsulation member, a second encapsulation member, at least one semiconductor chip, a plurality of metal pins and a second insulation layer. The first encapsulation member includes a first metal layer, a first insulation layer and a second metal layer. The at least one semiconductor chip is disposed between the first encapsulation member and the second encapsulation member. The at least one semiconductor chip comprises a plurality of conductive terminals connected with the first metal layer or a third metal layer. The plurality of metal pins are disposed between and extended outward from the first encapsulation member and the second encapsulation member. The second insulation layer is disposed between the first encapsulation member and the second encapsulation layer for securing the first encapsulation member, the second encapsulation member, the at least one semiconductor chip, and the plurality of metal pins.