Patent classifications
H01L2224/81903
Methods for manufacturing a plurality of electronic circuits
The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising: providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions; providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs; dispensing an adhesive onto the first structure and/or onto the flexible ICs; transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit, providing a heated surface and an opposing surface together having a gap therebetween, transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.
Bonding apparatus and bonding method
A bonding apparatus bonds a semiconductor die, which has a first mam surface provided with a bump electrode, to a substrate by means of thermo-compression, with a thermo-compression film being interposed therebetween. The bonding apparatus includes: an intermediate stage that has a die placing surface on which the semiconductor die is placed such that the die placing surface faces the first main surface; and a bonding tool which detachably holds a second main surface of the semiconductor die that is placed on the intermediate stage, the second main surface being on the reverse side of the first main surface. The intermediate stage has a push-up mechanism which applies, to the first main surface of the semiconductor die, a force for separating the semiconductor die therefrom in the normal direction of the die placing surface (in a Z-axis direction).
Bonding apparatus and bonding method
This bonding apparatus is provided with: a bonding mechanism which has a bonding surface that holds a semiconductor die in a detachable manner, with a film being interposed therebetween, and a heater that applies heat to the bonding surface; a film conveyance mechanism which supplies the film to the bonding surface; a remover bar which is able to enter between the film and the bonding surface; and a drive unit which drives the remover bar.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF
A display device includes a display substrate, a signal pad part, an insulating layer, a connection pad part, and an electronic component. The signal pad part includes first and second signal pad parts, which face each other in one direction. The insulating layer covers the signal pad part. The connection pad part is disposed on the insulating layer and includes a first connection pad part overlapping the first signal pad part and a second connection pad part. The second connection pad part is electrically connected to the first connection pad part and is in electrical contact with the second signal pad part through a contact hole defined in the insulating layer. The electronic component includes a bump that is in electrical contact with the first connection pad part. The first signal pad part includes a plurality of signal pad portions spaced apart from each other.
Nanowire bonding interconnect for fine-pitch microelectronics
A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 μm from each other to enable contact or direct-bonding between pads and vias with diameters under 5 μm at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 μm in height for direct bonding.
Sensors having an active surface
Disclosed in one example is an apparatus including a substrate, a sensor over the substrate including an active surface and a sensor bond pad, a molding layer over the substrate and covering sides of the sensor, the molding layer having a molding height relative to a top surface of the substrate that is greater than a height of the active surface of the sensor relative to the top surface of the substrate, and a lidding layer over the molding layer and over the active surface. The lidding layer and the molding layer form a space over the active surface of the sensor that defines a flow channel.
Micro LED display and manufacturing method with conductive film
A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing.
Micro LED display module with excellent color tone and high brightness
A method of manufacturing a micro light emitting diode (LED) display module. The method of manufacturing a micro LED display module may include: pressing a plurality of micro LEDs disposed on a substrate to which an adhesive layer is applied, to electrically connect the plurality of micro LEDs to electrode pads of the substrate; performing testing to detect whether at least one of the plurality of micro LEDs is defective in a state in which the plurality of micro LEDs are pressurized and the adhesive layer is uncured; and based on detecting that at least one of the plurality of micro LEDs is defective, performing control to harden the adhesive layer.
Micro LED display module with excellent color tone and high brightness
A method of manufacturing a micro light emitting diode (LED) display module. The method of manufacturing a micro LED display module may include: pressing a plurality of micro LEDs disposed on a substrate to which an adhesive layer is applied, to electrically connect the plurality of micro LEDs to electrode pads of the substrate; performing testing to detect whether at least one of the plurality of micro LEDs is defective in a state in which the plurality of micro LEDs are pressurized and the adhesive layer is uncured; and based on detecting that at least one of the plurality of micro LEDs is defective, performing control to harden the adhesive layer.
Micro LED display module and method of manufacturing the same
A method of manufacturing a micro light emitting diode (LED) display module includes stacking a connecting layer onto a transfer substrate on which a micro LED is disposed; positioning the transfer substrate above a display substrate, in which a plurality of thin-film transistors are formed, so that the micro LED faces the display substrate; transferring, to the display substrate, the micro LED and a connecting member that is in contact with the micro LED and is separated from the connecting layer by using a laser transfer method; and heating the micro LED and compressing the micro LED against the display substrate to bond the micro LED to the display substrate by the connecting member.