A semiconductor package includes: a substrate including a conductive pad; a semiconductor device including a conductive member; and a connection element between the conductive pad and the conductive member, wherein the connection element has a sidewall, and an angle of the sidewall relative to the conductive pad is equal to or less than about 90 degrees.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

A process for manufacturing a surface-mount electronic device includes forming a plurality of preliminary contact regions of a sinterable material on a supporting structure, the supporting structure being of a soluble type. A chip including a semiconductor body is mechanically coupled to the supporting structure. The sinterable material is sintered such that each preliminary contact region forms a corresponding sintered preliminary contact, and the chip and the plurality of preliminary contact regions are coated with a dielectric coating region, and the supporting structure is removed using a jet of liquid.

A process for manufacturing a surface-mount electronic device includes forming a plurality of preliminary contact regions of a sinterable material on a supporting structure, the supporting structure being of a soluble type. A chip including a semiconductor body is mechanically coupled to the supporting structure. The sinterable material is sintered such that each preliminary contact region forms a corresponding sintered preliminary contact, and the chip and the plurality of preliminary contact regions are coated with a dielectric coating region, and the supporting structure is removed using a jet of liquid.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

A semiconductor package includes a cavity substrate, a semiconductor die, and an encapsulant. The cavity substrate includes a redistribution structure and a cavity layer on an upper surface of the redistribution structure. The redistribution structure includes pads on the upper surface, a lower surface, and sidewalls adjacent the upper surface and the lower surface. The cavity layer includes an upper surface, a lower surface, sidewalls adjacent the upper surface and the lower surface, and a cavity that exposes pads of the redistribution structure. The semiconductor die is positioned in the cavity. The semiconductor die includes a first surface, a second surface, sidewalls adjacent the first surface and the second surface, and attachment structures that are operatively coupled to the exposed pads. The encapsulant encapsulates the semiconductor die in the cavity and covers sidewalls of the redistribution structure.

A semiconductor package includes a cavity substrate, a semiconductor die, and an encapsulant. The cavity substrate includes a redistribution structure and a cavity layer on an upper surface of the redistribution structure. The redistribution structure includes pads on the upper surface, a lower surface, and sidewalls adjacent the upper surface and the lower surface. The cavity layer includes an upper surface, a lower surface, sidewalls adjacent the upper surface and the lower surface, and a cavity that exposes pads of the redistribution structure. The semiconductor die is positioned in the cavity. The semiconductor die includes a first surface, a second surface, sidewalls adjacent the first surface and the second surface, and attachment structures that are operatively coupled to the exposed pads. The encapsulant encapsulates the semiconductor die in the cavity and covers sidewalls of the redistribution structure.