An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.

An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic SnBi compound, and the eutectic SnBi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90. The method further includes cooling down the solder bump.

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic SnBi compound, and the eutectic Sn-Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90. The method further includes cooling down the solder bump.

A method for forming an electronic package is provided. The method comprises: providing a package substrate having a front surface and a back surface, wherein multiple sets of conductive pads are formed on the front surface of the package substrate; forming solder bumps on each set of conductive pads; attaching multiple front electronic components onto the front surface of the package substrate via solder bumps, wherein each of the multiple front electronic components is aligned with one set of the multiple sets of conductive pads; loading the package substrate on a bottom chase with the front surface facing upward; pressing, with a top chase, the front electronic components against the bottom chase to reshape the solder bumps and horizontally align top surfaces of the front electronic components with each other; and forming a front mold cap on the front surface to encapsulate the front electronic components.

An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.