A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims.

A microelectronic package may include a first microelectronic unit including a semiconductor chip having first chip contacts, an encapsulant contacting an edge of the semiconductor chip, and first unit contacts exposed at a surface of the encapsulant and electrically connected with the first chip contacts. The package may include a second microelectronic unit including a semiconductor chip having second chip contacts at a surface thereof, and an encapsulant contacting an edge of the chip of the second unit and having a surface extending away from the edge. The surfaces of the chip and the encapsulant of the second unit define a face of the second unit. Package terminals at the face may be electrically connected with the first unit contacts through bond wires electrically connected with the first unit contacts, and the second chip contacts through metallized vias and traces formed in contact with the second chip contacts.

An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

Provided is a semiconductor device having as many input/output pads as possible using a chip having a small number of input/output pads. The semiconductor device includes a substrate including first and second extending input/output pads, a first memory structure disposed on the substrate and including first connecting input/output pads, a second memory structure disposed on the first memory structure and including second connecting input/output pads, and a wiring structure formed on lateral surfaces of the first and second memory structures and connecting the first and second connecting input/output pads and the first and second extending input/output pads, respectively; wherein the wiring structure includes a first wiring connecting the first connecting input/output pads and the first extending input/output pad and a second wiring connecting the first connecting input/output pads and the second extending input/output pad, and the second wiring is offset relative to the first wiring.

Provided is a semiconductor device having as many input/output pads as possible using a chip having a small number of input/output pads. The semiconductor device includes a substrate including first and second extending input/output pads, a first memory structure disposed on the substrate and including first connecting input/output pads, a second memory structure disposed on the first memory structure and including second connecting input/output pads, and a wiring structure formed on lateral surfaces of the first and second memory structures and connecting the first and second connecting input/output pads and the first and second extending input/output pads, respectively; wherein the wiring structure includes a first wiring connecting the first connecting input/output pads and the first extending input/output pad and a second wiring connecting the first connecting input/output pads and the second extending input/output pad, and the second wiring is offset relative to the first wiring.

A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims.

An integrated circuit includes a scribe line, a bonding pad structure and an extension pad structure. The scribe line is disposed on a substrate, and the bonding pad structure and the extension pad structure are both disposed in a dielectric layer on the substrate. The bonding pad structure includes first vias disposed on first metal layers in the dielectric layer. The extension pad structure includes second metal layers and a number of the second metal layer is less than that of the first metal layers. Also, the bonding pad structure has a first region and a second region, and second vias is disposed on the second metal layers in the first region and no vias is disposed on the second metal layers in the second region.

An electronic package and a method of making the same in provided. The electronic package includes a dielectric layer and a conformal masking layer disposed on at least a portion of the dielectric layer. The electronic package further includes a routing layer disposed on at least a portion of the masking layer and a micro-via disposed at least in part in the conformal masking layer and the routing layer. Further, at least a portion of the routing layer forms a conformal electrically conductive layer in at least a portion of the micro-via. Also, the conformal masking layer is configured to define a size of the micro-via. The electronic package further includes a semiconductor die operatively coupled to the micro-via.

A microelectronic package may include a first microelectronic unit including a semiconductor chip having first chip contacts, an encapsulant contacting an edge of the semiconductor chip, and first unit contacts exposed at a surface of the encapsulant and electrically connected with the first chip contacts. The package may include a second microelectronic unit including a semiconductor chip having second chip contacts at a surface thereof, and an encapsulant contacting an edge of the chip of the second unit and having a surface extending away from the edge. The surfaces of the chip and the encapsulant of the second unit define a face of the second unit. Package terminals at the face may be electrically connected with the first unit contacts through bond wires electrically connected with the first unit contacts, and the second chip contacts through metallized vias and traces formed in contact with the second chip contacts.