A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

A semiconductor device includes an insulating carrier structure comprised of an insulating inorganic material. The carrier structure has a receptacle in which a semiconductor chip is disposed. The semiconductor chip has a first side, a second side and a lateral rim. The carrier structure laterally surrounds the semiconductor chip and the lateral rim. The semiconductor device also includes a metal structure on and in contact with the second side of the semiconductor chip and embedded in the carrier structure.

The present disclosure relates to the technical field of semiconductors, and particularly discloses a preparation method of a chip package structure and a package structure. The preparation method of a chip package structure includes the following steps: providing a wafer and producing conductive structures on the wafer based on chip distribution; performing wafer dicing based on the chip distribution to obtain chip monomers; producing plastic package bodies including a plurality of chip monomers based on the chip monomers; and producing electric connection structures on the plastic package bodies. The preparation method of a chip package structure omits the processes of laser drilling and later metal layer covering, eliminates a deviation caused by laser drilling, and improves the processing precision of the package structure, thereby improving the yield of products, simplifying the whole chip packaging process, and effectively improving the packaging efficiency.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

A semiconductor structure includes a functional die, a dummy die, a conductive feature and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die and disposed in a dielectric layer. The alignment mark is disposed in the dielectric layer, wherein the alignment mark is electrically isolated from the dummy die.