A semiconductor module manufacturing method includes: preparing an insulating wiring substrate 10 including a substrate and a first conductor provided on the substrate, a semiconductor chip 20 having a first surface and a second surface, and a printed wiring board 50 including an insulating substrate and a lead frame 52 provided on the insulating substrate, the lead frame including a first portion 52a provided in a first via-hole penetrating through the insulating substrate; disposing the first surface on the first conductor via a first sintering material; disposing an insulating sheet on the insulating wiring substrate to surround the semiconductor chip; disposing the printed wiring board such that the insulating substrate faces the insulating sheet and the first portion makes contact with the second surface via a second sintering material; and heating the insulating wiring substrate, the semiconductor chip, the insulating sheet, and the printed wiring board while they are pressurized.

This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back of the semiconductor chip is adhered on the chip carrier, and the front electrode of the semiconductor chip and the pin are connected respectively with a metal connector. The size, shape and thickness of the adhesive material are applied according to different application requirements according to size and shapes of the contact zone of the semiconductor chip and the metal connector. Particularly, the adhesive zones are formed by pre-printing the adhesive material thus significantly enhance the quality and performance of semiconductor products, and improves the productivity.

This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back of the semiconductor chip is adhered on the chip carrier, and the front electrode of the semiconductor chip and the pin are connected respectively with a metal connector. The size, shape and thickness of the adhesive material are applied according to different application requirements according to size and shapes of the contact zone of the semiconductor chip and the metal connector. Particularly, the adhesive zones are formed by pre-printing the adhesive material thus significantly enhance the quality and performance of semiconductor products, and improves the productivity.

Plating pre-processing is carried out before carrying out a plating process on the surface of a conducting section provided on a semiconductor wafer. A first metal film is formed on the surface of the conducting section by NiP alloy plating process. A second metal film is formed on the surface of the first metal film by immersion Ag plating process. The semiconductor wafer is diced and cut into semiconductor chips. A conductive composition containing Ag particles is applied to the surface of the second metal film which is on the front surface of the semiconductor chip. A bonding layer containing Ag particles is formed by sintering the conductive composition through heating. A metal plate is then bonded to the surface of the second metal film via the bonding layer containing Ag particles. The electronic component has high bonding strength, excellent thermal resistance and heat radiation properties.

A method of manufacturing the semiconductor device includes: preparing a lead member including a bonding part and a beam part continuously connected to the bonding part; preparing a pressing jig provided with an opening; placing the bonding part, with sintering material interposed, on a semiconductor chip provided on a conductive layer of an insulated circuit substrate, the insulated circuit substrate including an insulating plate and the conductive layer provided on the insulating plate; placing the pressing jig on the bonding part, the sintering material, the semiconductor chip, and the conductive layer so that the opening overlaps with the beam part; and applying pressure and heat to the bonding part, the sintering material, the semiconductor chip, and the conductive layer by the pressing jig.