An electronic module has a first substrate 11, an electronic element 13, 23 disposed on one side of the first substrate 11, a second substrate 21 disposed on one side of the electronic element 13, 23, a first coupling body 210 disposed between the first substrate 11 and the second substrate 21, a second coupling body 220 disposed between the first substrate 11 and the second substrate 21, and shorter than the first coupling body 210, and a sealing part 90 which seals at least the electronic element. The first coupling body 210 is not electrically connected to the electronic element. The second coupling body 220 is electrically connected to the electronic element 13, 23.

An electronic module has a first substrate 11, an electronic element 13, 23 disposed on one side of the first substrate 11, a second substrate 21 disposed on one side of the electronic element 13, 23, a first coupling body 210 disposed between the first substrate 11 and the second substrate 21, a second coupling body 220 disposed between the first substrate 11 and the second substrate 21, and shorter than the first coupling body 210, and a sealing part 90 which seals at least the electronic element. The first coupling body 210 is not electrically connected to the electronic element. The second coupling body 220 is electrically connected to the electronic element 13, 23.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

A semiconductor device is disclosed. In one example, the semiconductor device comprises a first semiconductor die comprising a first surface, a second surface opposite to the first surface, and a contact pad disposed on the first surface, a further contact pad spaced apart from the semiconductor die, a clip comprising a first layer of a first metallic material and a second layer of a second metallic material different from the first metallic material, wherein the first layer of the clip is connected with the contact pad, and the second layer of the clip is connected with the further contact pad.

The embodiments of the present disclosure relate to a power package module of multiple power chips and a method of manufacturing a power chip unit. The power package module of multiple power chips includes: a power chip unit including at least two power chips placed in parallel and a bonding part bonding the two power chips; and a substrate supporting the power chip unit and including a metal layer electronically connecting with the power chip unit, wherein the bonding part is made from an insulated material with cohesiveness, the distance of a gap between the two power chips placed in parallel is smaller than or equal to a preset width, and the bonding part is filled in the gap, insulatedly bonding the two power chips placed in parallel, and wherein side surfaces of the two power chips are naked except the portions contacting the bonding part.

The embodiments of the present disclosure relate to a power package module of multiple power chips and a method of manufacturing a power chip unit. The power package module of multiple power chips includes: a power chip unit including at least two power chips placed in parallel and a bonding part bonding the two power chips; a substrate supporting the power chip unit and including a metal layer electronically connecting with the power chip unit; and a sealing layer isolating the power chip unit on the substrate from surroundings to seal the power chip unit; the bonding part and the sealing layer are made from different insulated material, the distance of a gap between the two power chips placed in parallel is smaller than or equal to a preset width, and the bonding part is filled in the gap, insulatedly bonding the two power chips placed in parallel.

A semiconductor device includes an insulating substrate, a first and a second obverse-surface metal layers disposed on an obverse surface of the insulating substrate, a first and a second reverse-surface metal layers disposed on a reverse surface of the insulating substrate, a first conductive layer and a first semiconductor element disposed on the first obverse-surface metal layer, and a second conductive layer and a second semiconductor element disposed on the second obverse-surface metal layer. Each of the first conductive layer and the second conductive layer has an anisotropic coefficient of linear expansion and is arranged such that the direction in which the coefficient of linear expansion is relatively large is along a predetermined direction perpendicular to the thickness direction of the insulating substrate. The first and second reverse-surface metal layers are smaller than the first and second obverse-surface metal layers in dimension in the predetermined direction.

A semiconductor device includes a semiconductor chip having a source electrode on the front surface thereof, a diode that has an anode electrode on the front surface thereof, and a first conductive member through which output signals from the source electrode pass. The semiconductor device further includes a first wiring member that electrically connects the source electrode and the first conductive member, and a second wiring member that electrically connects the anode electrode and the first conductive member and that has a wider surface area than the first wiring member. The semiconductor device includes a second conductive member where the semiconductor chip and the diode are arranged.

A semiconductor device includes a semiconductor chip having a source electrode on the front surface thereof, a diode that has an anode electrode on the front surface thereof, and a first conductive member through which output signals from the source electrode pass. The semiconductor device further includes a first wiring member that electrically connects the source electrode and the first conductive member, and a second wiring member that electrically connects the anode electrode and the first conductive member and that has a wider surface area than the first wiring member. The semiconductor device includes a second conductive member where the semiconductor chip and the diode are arranged.