A first alignment resin (4) is formed in an annular shape on an electrode (3) of an insulating substrate (1). First plate solder (5) having a thickness thinner than that of the first alignment resin (4) is arranged on the electrode (3) on an inner side of the annular shape of the first alignment resin (4). A semiconductor chip (6) is arranged on the first plate solder (5). The first plate solder (5) is made to melt to bond a lower surface of the semiconductor chip (6) to the electrode (3).

A clip for a semiconductor package and a semiconductor having a clip is disclosed. In one example, the clip includes a first planar portion, a plurality of first pillars, and a plurality of first solder balls. Each first pillar of the plurality of first pillars is coupled to the first planar portion. Each first solder ball of the plurality of first solder balls is coupled to a corresponding first pillar of the plurality of first pillars.

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

An embodiment related to a package is disclosed. The package includes a component mounted to a die attach region on a package substrate. A passive component with first and second passive component terminals is vertically attached to the package substrate. An encapsulant is disposed over the package substrate to encapsulate the package. In one embodiment, an external component is stacked above the encapsulant and is electrically coupled to the encapsulated package.

An embodiment related to a package is disclosed. The package includes a component mounted to a die attach region on a package substrate. A passive component with first and second passive component terminals is vertically attached to the package substrate. An encapsulant is disposed over the package substrate to encapsulate the package. In one embodiment, an external component is stacked above the encapsulant and is electrically coupled to the encapsulated package.

A method for manufacturing a semiconductor device includes: fixing a semiconductor chip to a first part of a leadframe; bonding one connector member to a first terminal of the semiconductor chip, a second terminal of the semiconductor chip, a second part of the leadframe, and a third part of the leadframe; forming a sealing member; and separating a first conductive part of the connector member and a second conductive part of the connector member by removing at least a section of the portion of the connector member exposed outside the sealing member, the first conductive part being bonded to the first terminal and the second part, the second conductive part being bonded to the second terminal and the third part.

An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor package is disclosed. In one example, the package includes a non-power chip including a first electrical contact arranged at a first main surface of the non-power chip. The semiconductor package further includes a power chip comprising a second electrical contact arranged at a second main surface of the power chip. A first electrical redistribution layer coupled to the first electrical contact and a second electrical redistribution layer coupled to the second electrical contact. When measured in a first direction vertical to at least one of the first main surface or the second main surface, a maximum thickness of at least a section of the first electrical redistribution layer is smaller than a maximum thickness of the second electrical redistribution layer.

A semiconductor device includes a die pad, a semiconductor element, a joining layer, a first conductive member, and a second conductive member. The semiconductor element has a first electrode opposing an obverse surface of the die pad, and a second electrode and a third electrode that are opposite to the first electrode in a thickness direction. The first electrode is electrically joined to the obverse surface. The joining layer electrically joins the first electrode and the obverse surface to each other. The first conductive member is electrically joined to the second electrode. The second conductive member is electrically joined to the third electrode. The area of the third electrode is smaller than the area of the second electrode as viewed along the thickness direction. The Young's modulus of the second conductive member is smaller than the Young's modulus of the first conductive member.