With this copper wire joining method, a rubbed portion on which a coating remains between an electrode and a core wire is formed on the electrode. Then, after a capillary is moved away from the rubbed portion, and a ball is formed by melting a copper wire at a tip end of the capillary. Next, the ball is joined to the rubbed portion by pressing the ball against the rubbed portion.

With this copper wire joining method, a rubbed portion on which a coating remains between an electrode and a core wire is formed on the electrode. Then, after a capillary is moved away from the rubbed portion, and a ball is formed by melting a copper wire at a tip end of the capillary. Next, the ball is joined to the rubbed portion by pressing the ball against the rubbed portion.

A Pd-coated Cu bonding wire of an embodiment contains Pd of 1.0 to 4.0 mass %, and a S group element of 50 mass ppm or less in total (S of 5.0 to 12.0 mass ppm, Se of 5.0 to 20.0 mass ppm, or Te of 15.0 to 50 mass ppm). At a crystal plane of a cross section of the wire, a <100> orientation ratio is 15% or more, and a <111> orientation ratio is 50% or less. When a free air ball is formed on the wire and a tip portion is analyzed, a Pd-concentrated region is observed on the surface thereof.

A method for fabricating a semiconductor device is disclosed. A packaged semiconductor device is provided having copper ball bonds attached to aluminum pads. The packaged device is treated for at least one cycle at a temperature in the range from about 250 C. to 270 C. for a period of time in the range from about 20 s to 40 s.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

A capillary for performing ball bonding includes a body defining a lumen, a first blade defined in a lower tip of the body, and a second blade defined in the lower tip of the body for increasing reliability of a ball bonding procedure performed using the capillary.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

The present disclosure provides a wire bonding apparatus, a wire bonding method and a semiconductor device. The wire bonding apparatus includes: a wire tube for containing the wire and including a wire exit; a wire heating assembly located at a side of the wire exit; and a pre-shaping assembly located at a side of the wire tube and including a wire pre-pressing face; the pre-shaping assembly having a first state in which the wire pre-pressing face of the pre-shaping assembly is configured to abut the wire tube and a second state in which the pre-shaping assembly is configured to disengage from the wire tube. The wire bonding apparatus, the wire bonding method and the semiconductor device as provided in the present disclosure can reduce or eliminate the cratering effect.

A method of forming an electrical connection is provided. The method may include: forming a first foldback bond on a first contact element by bonding a first section of a first bonding wire to the first contact element; folding the first bonding wire to arrange a second section of the first bonding wire over the bonded first section; and pressing the second section onto the first section, bonding a third section of the first bonding wire to a second contact element, and bonding a fourth section of the first bonding wire onto the first foldback bond.